Temperature-dependent physical and memory characteristics of atomic-layer-deposited RuOx Metal Nanocrystal Capacitors

Journal of Nanomaterials

Volumn 2011, Issue , 2011, Pages

  Maikap, S ^a   Banerjee, W ^a   Tien, T C ^b   Wang, T Y ^c,d   Yang, J R ^d  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c UNIVERSITY OF SYDNEY   (Australia)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC LAYER DEPOSITED; AVERAGE DIAMETER; DATA RETENTION TIME; DEEP LEVEL; ELECTRONS AND HOLES; EQUIVALENT OXIDE THICKNESS; FOWLER-NORDHEIM; GATE VOLTAGES; HF SILICATE; HIGH-DENSITY; LARGE HYSTERESIS; MEMORY STRUCTURE; MEMORY WINDOW; METAL NANOCRYSTALS; NANO SCALE; NON-VOLATILE MEMORY APPLICATION; POST DEPOSITION ANNEALING; PROGRAM/ERASE; SI SUBSTRATES; SMALL CHARGES; TEMPERATURE DEPENDENT;

AGGLOMERATION; ANNEALING; CAPACITORS; CRYSTAL ATOMIC STRUCTURE; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METAL ANALYSIS; METALS; NANOCRYSTALS; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

VANADIUM;

EID: 80053525706     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2011/810879     Document Type: Article

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