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Volumn 106, Issue 5, 2009, Pages

Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)0.2 (Ag2 MoO4)0.8 solid electrolyte films

(9) Yan, X B a Yin, J a Guo, H X a Su, Y a Xu, B a Li, H T a Yan, D W a Xia, Y D a Liu, Z G a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CURRENT; FAST RESPONSE; HIGH-RESISTANCE STATE; LOW RESISTANCE; LOW-RESISTANCE STATE; MEMORY CELL; METALLIC CONDUCTION; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY CELLS; POLYCRYSTALLINE; POWER DISSIPATION; PULSE LASER DEPOSITION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION PROPERTIES; SOLID ELECTROLYTE FILMS; STORAGE MEDIUM;

ION BEAM LITHOGRAPHY; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR STORAGE; SILICON COMPOUNDS; SOLID ELECTROLYTES; SURFACE STRUCTURE; SWITCHING; SWITCHING SYSTEMS; THIN FILMS;

X RAY DIFFRACTION ANALYSIS;

EID: 70349321616 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3211293 Document Type: Article

Times cited : (17)

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