Electrical properties of plasma-enhanced chemical vapor deposited germanium selenide films

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 4, 2005, Pages 1785-1791

  Qamhieh, N ^a   Adriaenssens, G J ^b  

^a UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Electrical properties; Germanium selenide; Plasma enhanced chemical vapour deposition

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SEMICONDUCTORS; ELECTRIC PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SELENIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS;

CHEMICAL VAPOR DEPOSITED; CONDUCTIVITY MEASUREMENTS; MEYER-NELDEL RELATIONS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SELENIDES; STEADY STATE; THERMALLY ACTIVATED;

GERMANIUM COMPOUNDS;

EID: 24644498288     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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