메뉴 건너뛰기




Volumn 108, Issue 7, 2010, Pages

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; COMPLIANCE CURRENT; RESISTIVE SWITCHING; ROOM TEMPERATURE; SPUTTERING DEPOSITION; SWITCHING MECHANISM; SWITCHING MODES; VOLTAGE POLARITY; ZNO THIN FILM;

EID: 77958180651     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3489882     Document Type: Article
Times cited : (96)

References (13)
  • 1
    • 36048964246 scopus 로고    scopus 로고
    • Anode-interface localized filamentary mechanism in resistive switching of Ti O2 thin films
    • DOI 10.1063/1.2749846
    • K. M. Kim, B. J. Choi, Y. C. Shin, S. Choi, and C. S. Hwang, Appl. Phys. Lett. APPLAB 0003-6951 91, 012907 (2007). 10.1063/1.2749846 (Pubitemid 350092117)
    • (2007) Applied Physics Letters , vol.91 , Issue.1 , pp. 012907
    • Kim, K.M.1    Choi, B.J.2    Shin, Y.C.3    Choi, S.4    Hwang, C.S.5
  • 2
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • DOI 10.1038/nmat2023, PII NMAT2023
    • R. Waser and M. Aono, Nature Mater. NMAACR 1476-1122 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 7
    • 36849101960 scopus 로고
    • JAPIAU 0021-8979, 10.1063/1.1656022
    • J. R. Yeargan and H. L. Taylor, J. Appl. Phys. JAPIAU 0021-8979 39, 5600 (1968). 10.1063/1.1656022
    • (1968) J. Appl. Phys. , vol.39 , pp. 5600
    • Yeargan, J.R.1    Taylor, H.L.2
  • 13
    • 35948943053 scopus 로고
    • PYLAAG 0375-9601, 10.1016/0375-9601(71)90122-8
    • R. Pinto, Phys. Lett. A PYLAAG 0375-9601 35, 155 (1971). 10.1016/0375-9601(71)90122-8
    • (1971) Phys. Lett. A , vol.35 , pp. 155
    • Pinto, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.