Insulating properties of tantalum pentoxide capacitor films obtained by annealing in dry ozone

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1731-1738

  Moon, B K ^a   Isobe, C ^a   Aoyama, J ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000238275     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369339     Document Type: Article

References (16)

1. T. Kaga et al., International Electron Devices Meeting Technical Digest (IEEE, Washington, DC, 1994), p. 927.
2. Y. Takashi, M. Sakao, S. Kamiyama, H. Suzuki, and H. Watanabe in Ref. 1, p. 839.
3. G. Q. Lo, D. L. Kwong, P. C. Fazan, V. K. Mathews, and N. Sandler, IEEE Electron Device Lett. 14, 216 (1993).
4. Y. Nishioka, N. Homma, H. Shinriki, K. Mukai, K. Yamaguchi, A. Uchida, K. Higeta, and K. Ogiue, IEEE Trans. Electron Devices 34, 215 (1987).
5. Y. Momiyama, H. Minakata, and T. Sugii, Digest of Technical Papers, 1997 Symposium on VLSI Technology (IEEE, Kyoto, 1997), p. 135.
6. W. H. Knausenberger and R. N. Tauber, J. Electrochem. Soc. 120, 927 (1973).
7. C. Isobe and M. Saitoh, Appl. Phys. Lett. 56, 907 (1990).
8. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices 38, 455 (1991).
9. Y. Matsui, K. Torii, M. Hirayama, Y. Fujisaki, S. Iijima, and Y. Ohji, IEEE Electron Device Lett. 17, 431 (1996).
10. S. Kamiyama, H. Suzuki, H. Watanabe, A. Sakai, H. Kimura, and J. Mizuki, J. Electrochem. Soc. 141, 1246 (1994).
11. K. W. Kwon, I. S. Park, D. H. Han, E. S. Kim, S. T. Ahn, and M. Y. Lee, in Ref. 1, p. 839.
12. T. Aoyama, S. Saida, Y. Okayama, M. Fujisaki, K. Imai, and T. Arikado, J. Electrochem. Soc. 143, 977 (1996).
13. S. Tanimoto, M. Matsui, K. Kamisako, K. Kuroiwa, and Y. Tarui, J. Electrochem. Soc. 139, 320 (1992).
14. S. Kamiyama, P. Y. Lesaicherre, A. Ishitani, A. Sakai, A. Tanikawa, and I. Nishiyama, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials (Japan Society of Appl. Phys., Tsukuba, 1992), p. 521.
15. H. Watanabe, N. Aoto, S. Adachi, and T. Kikkawa, J. Appl. Phys. 71, 3538 (1992).
16. H. Watanabe, T. Tatsuni, S. Ohnishi, H. Kitajima, I. Honma, T. Ikarashi, and H. Ono, IEEE Trans. Electron Devices 42, 1247 (1995).