N -type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

Applied Physics Letters

Volumn 86, Issue 7, 2005, Pages 1-3

  Nosho, Yosuke ^a   Ohno, Yutaka ^a,b   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCIUM; CARBON NANOTUBES; CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRODES; ELECTRON BEAMS; ELECTRON TRANSPORT PROPERTIES; EVAPORATION; FERMI LEVEL; SCHOTTKY BARRIER DIODES;

CONTACT ELECTRODES; ELECTRON BEAM EVAPORATION; NANOTUBE FIELD EFFECT TRANSISTORS; SINGLE WALLED CARBON NANOTUBES (SWNT);

FIELD EFFECT TRANSISTORS;

EID: 17044385425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865343     Document Type: Article

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