High-performance n -type carbon nanotube field-effect transistors with estimated sub- 10-ps gate delay

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Zhang, Z Y ^a   Wang, S ^a   Ding, L ^a   Liang, X L ^a   Xu, H L ^a   Shen, J ^a   Chen, Q ^a   Cui, R L ^b   Li, Y ^b   Peng, L M ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; SCANDIUM; SINGLE-WALLED CARBON NANOTUBES (SWCN);

DEVICE METRICS; SCANDIUM CONTACTS;

FIELD EFFECT TRANSISTORS;

EID: 41649103879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907696     Document Type: Article

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