The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts

Nanotechnology

Volumn 20, Issue 17, 2009, Pages

  Svensson, Johannes ^a   Sourab, Abdelrahim A ^a   Tarakanov, Yury ^b   Lee, Dong Su ^c   Park, Seung Joo ^d   Baek, Seung Jae ^d   Park, Yung Woo ^d   Campbell, Eleanor E B ^a,e  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d Seoul National University   (South Korea)

^e UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CARBON NANOTUBE DEVICES; DIRECT MEASUREMENTS; FERMI-LEVEL PINNING; NANOTUBE CONTACTS; NANOTUBE DIAMETERS; PD ELECTRODES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENTS; THERMIONIC EMISSION CURRENTS;

ACTIVATION ENERGY; PALLADIUM; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

CARBON NANOTUBES;

CARBON NANOTUBE; PALLADIUM;

ARTICLE; DEVICE; ELECTRODE; ENERGY; HEIGHT; MEASUREMENT; PRIORITY JOURNAL; TEMPERATURE;

EID: 65549113126     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/17/175204     Document Type: Article

References (29)

1. Appenzeller J, Knoch J, Derycke V, Martel R, Wind S and Avouris Ph 2002 Phys. Rev. Lett. 89 126801
2. Schottky W 1940 Phys. Z. 41 570
3. Tung R T 2001 Phys. Rev. B 64 205310
4. Leonard F and Talin A A 2006 Phys. Rev. Lett. 97 026804
5. Leonard F and Tersoff J 2000 Phys. Rev. Lett. 84 4693
6. Javey A, Guo J, Wang Q, Lundstrom M and Dai H 2003 Nature 424 654
7. Chen Z, Appenzeller J, Knoch J, Lin Y M and Avouris Ph 2005 Nano Lett. 5 1497
8. Martel R, Derycke V, Lavoie C, Appenzeller J, Chan K K, Tersoff J and Avouris Ph 2001 Phys. Rev. Lett. 87 256805
9. Nosho Y, Ohno Y, Kishimoto S and Mizutani T 2006 Nanotechnology 17 3412
10. Chen Y F and Fuhrer M S 2006 Nano Lett. 6 2158
11. Appenzeller J, Radosavljevic M, Knoch J and Avouris Ph 2004 Phys. Rev. Lett. 92 048301
12. Kim W, Javey W, Tu E, Cao J, Wang W and Dai H 2005 Appl. Phys. Lett. 87 173101
13. Shan B and Cho K 2004 Phys. Rev. B 70 233405
14. Palacios J J, Tarakeshwar P and Kim D M 2008 Phys. Rev. B 77 113403
15. Inami N, Mohamed M A, Shikoh E and Fujiwara A 2008 Appl. Phys. Lett. 92 243115
16. Freitag M, Tsang J C, Bol A, Yuan D, Liu J and Avouris Ph 2007 Nano Lett. 7 2037
17. Marcus F, Radosavljevic R, Yangxin Z, Johnson A T and Walter F S 2001 Appl. Phys. Lett. 79 3326
18. Sze S M 1969 Physics of Semiconductor Devices (New York: Wiley-Interscience)
19. Purewal M S, Hong B H, Ravi A, Chandra B, Hone J and Kim P 2007 Phys. Rev. Lett. 98 186808
20. Sze S M, Coleman D J and Loya A Jr 1971 Solid-State Electron. 14 1209
21. Rekhviashvili S S 2006 Tech. Phys. Lett. 32 123
22. Behnam A, Johnson J, Choi Y, Noriega L, Ertosun M G, Wu Z, Rinzler A G, Kapur P, Saraswat K C and Ural A 2008 J. Appl. Phys. 103 114315
23. Fuhrer M S, Kim B M, Dürkop T and Brintlinger T 2002 Nano Lett. 2 755
24. Kim W, Javey A, Vermesh O, Wang Q, Li Y and Dai H 2003 Nano Lett. 3 193
25. Joselevich E and Lieber C M 2002 Nano Lett. 2 1137
26. Suzuki S, Bower C, Watanabe Y and Zhou O 2000 Appl. Phys. Lett. 76 4007
27. Sun J P, Zhang Z X, Hou S M, Zhang G M, Gu Z N, Zhao X Y, Liu W M and Xue Z Q 2002 Appl. Phys. A 75 479
28. Shiraishi M and Ata M 2001 Carbon 39 1913
29. Michaelson H B 1977 J. Appl. Phys. 48 4729