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Physical Review Letters

Volumn 89, Issue 10, 2002, Pages

Carbon Nanotubes as Schottky Barrier Transistors

(6) Heinze, S a Tersoff, J a Martel, R a Derycke, V a Appenzeller, J a Avouris, Ph a

a IBM RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARBON NANOTUBES; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; ELECTROSTATICS; ENERGY GAP; FERMI LEVEL; GAS ADSORPTION; OHMIC CONTACTS; PROBABILITY; SEMICONDUCTOR DOPING; SWITCHING;

SCHOTTKY BARRIERS;

MESFET DEVICES;

EID: 0037009625 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.89.106801 Document Type: Article

Times cited : (1124)

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