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Split gates have been used to build CNT p-n junctions. These produce a photovoltage upon global illumination due to the built-in electric field at the junction. Refs: Lee, J. U.; Gipp, P. P.; Heller, C. M. Appl. Phys. Lett. 2004, 85, 145.
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Split gates have been used to build CNT p-n junctions. These produce a photovoltage upon global illumination due to the built-in electric field at the junction. Refs: Lee, J. U.; Gipp, P. P.; Heller, C. M. Appl. Phys. Lett. 2004, 85, 145.
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In the transistor on state, the open-circuit photovoltage from the nanotube bulk is reduced because the CNT is doped and recombination becomes more effective. The photovoltage from the Schottky barrier is further reduced because the depletion layer becomes very thin. Both effects also lead to diminishing short-circuit photocurrents at very high p-type doping. The fact that VOC diminishes faster than ISC is due to the increasing conductivity of the CNTFET for higher doping levels
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SC is due to the increasing conductivity of the CNTFET for higher doping levels.
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