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Volumn 7, Issue 7, 2007, Pages 2037-2042

Imaging of the schottky barriers and charge depletion in carbon nanotube transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DEPLETION; METAL CONTACT; PHOTOVOLTAGE SWITCHES;

EID: 34547215275     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070900e     Document Type: Article
Times cited : (129)

References (26)
  • 1
    • 33947107474 scopus 로고    scopus 로고
    • Electronics with Carbon Nanotubes
    • Avouris, Ph. Electronics with Carbon Nanotubes. Phys. World 2007, 20, 40.
    • (2007) Phys. World , vol.20 , pp. 40
    • Avouris, P.1
  • 2
    • 34547576119 scopus 로고    scopus 로고
    • Carbon Nanotube Electronics and Devices
    • O'Connell, M. J, Ed, CRC/Taylor & Francis: Boca Raton, FL
    • Freitag, M. Carbon Nanotube Electronics and Devices. In Carbon Nanotubes: Properties and Applications; O'Connell, M. J., Ed.; CRC/Taylor & Francis: Boca Raton, FL, 2006; pp 83-117.
    • (2006) Carbon Nanotubes: Properties and Applications , pp. 83-117
    • Freitag, M.1
  • 14
    • 3242718826 scopus 로고    scopus 로고
    • Split gates have been used to build CNT p-n junctions. These produce a photovoltage upon global illumination due to the built-in electric field at the junction. Refs: Lee, J. U.; Gipp, P. P.; Heller, C. M. Appl. Phys. Lett. 2004, 85, 145.
    • Split gates have been used to build CNT p-n junctions. These produce a photovoltage upon global illumination due to the built-in electric field at the junction. Refs: Lee, J. U.; Gipp, P. P.; Heller, C. M. Appl. Phys. Lett. 2004, 85, 145.
  • 22
    • 34547566886 scopus 로고    scopus 로고
    • In the transistor on state, the open-circuit photovoltage from the nanotube bulk is reduced because the CNT is doped and recombination becomes more effective. The photovoltage from the Schottky barrier is further reduced because the depletion layer becomes very thin. Both effects also lead to diminishing short-circuit photocurrents at very high p-type doping. The fact that VOC diminishes faster than ISC is due to the increasing conductivity of the CNTFET for higher doping levels
    • SC is due to the increasing conductivity of the CNTFET for higher doping levels.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.