Multimode transport in schottky-barrier carbon-nanotube field-effect transistors

Physical Review Letters

Volumn 92, Issue 22, 2004, Pages

  Appenzeller, J ^a   Knoch, J ^b   Radosavljevic M ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARBON NANOTUBES; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; GATES (TRANSISTOR); GREEN'S FUNCTION; POTASSIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNFET); DRAIN CURRENTS; GATE VOLTAGES; TIGHT BINDING (TB) CALCULATIONS;

MOSFET DEVICES;

EID: 3042798259     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.226802     Document Type: Article

References (27)

1. S. J. Tans, A. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
2. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
3. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
4. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, Nature Materials 1, 241 (2002).
5. S. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
6. F. Leonard and J. Tersoff, Phys. Rev. Lett. 88, 258302 (2002).
7. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, and Ph. Avouris, IEEE Trans. Nanotechnol. 1, 184 (2002).
8. J. Guo, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 51, 172 (2004).
9. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 89, 106801 (2002).
10. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris, Phys. Rev. Lett. 89, 126801 (2002).
11. S. Wind, J. Appenzeller, and Ph. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
12. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, Nature (London) 424, 654 (2003).
13. T. Dürkop, S. A. Getty, E. Cobas, and M. S. Fuhrer, Nano Lett. 4, 35 (2004).
14. J. W. G. Wildoer, L. C. Venema, A. G. Rinzler, R. E. Smalley, and C. Dekker, Nature (London) 391, 59 (1998).
15. T. W. Odom, J. L. Huang, P. Kim, and C. M. Lieber, Nature (London) 391, 62 (1998).
16. A. Hagen and T. Hertel, Nano Lett. 3, 283 (2003).
17. S. M. Bachilo, M. S. Strano, C. Kittrell, R. H. Hauge, R. E. Smalley, and R. B. Weisman, Science 298, 2361 (2002).
18. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Lee, S. G. Kim, A. G. Rinzler, D. T. Colbert, G. E. Scuseria, D. Tomanek, J. E. Fischer, and R. E. Smalley, Science 273, 483 (1996).
19. J. Guo, M. Lundstrom, and S. Datta, Appl. Phys. Lett. 80, 3192 (2002).
20. S. Wind, M. Radosavljevic, J. Appenzeller, and Ph. Avouris, J. Vac. Sci. Technol. B 21, 2856 (2003).
21. Ph. Avouris, J. Appenzeller, R. Martel, and S. Wind, Proc. IEEE 91, 1772 (2003).
22. M. Bockrath, J. Hone, A. Zettl, P. L. McEuen, A. G. Rinzler, and R. E. Smalley, Phys. Rev. B 61, R10606 (2000).
23. R. D. Antonov and A. T. Johnson, Phys. Rev. Lett. 83, 3274 (1999).
24. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University, Cambridge, England, 1995).
25. R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 93, 5613 (2003).
26. Ch. Jo, Ch. Kim, and Y. H. Lee, Phys. Rev. B 65, 035420 (2002).
27. A. Javey, Q. Wang, W. Kim, and H. Dai, IEDM Technical Digest 2003, 741 (2003).