The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors

Nano Letters

Volumn 5, Issue 7, 2005, Pages 1497-1502

  Chen, Zhihong ^a   Appenzeller, Joerg ^a   Knoch, Joachim ^b   Lin, Yu Ming ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METAL CONTACTS; METAL-NANOTUBE CONTACTS; TUNNELING BARRIERS;

ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; VACUUM APPLICATIONS;

CARBON NANOTUBES;

CARBON NANOTUBE; METAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPARATIVE STUDY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; METALS; MICROELECTRODES; MODELS, CHEMICAL; NANOTECHNOLOGY; NANOTUBES, CARBON; SURFACE PROPERTIES; TRANSISTORS;

EID: 23144462910     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0508624     Document Type: Article

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