Device characteristics of carbon nanotube transistor fabricated by direct growth method

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Inami, Nobuhito ^a,b   Mohamed, Mohd Ambri ^a   Shikoh, Eiji ^a   Fujiwara, Akihiko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CIVIL AVIATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; METALLIZING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS;

(+ MOD 2N) OPERATION; AMBIPOLAR; AMERICAN INSTITUTE OF PHYSICS (AIP); BIAS VOLTAGE DEPENDENCE; CARBON NANOTUBE (CN) TRANSISTORS; CARRIER INJECTION BARRIER; DEVICE FABRICATIONS; DEVICE OPERATIONS; DIRECT GROWTH; FIELD EFFECT TRANSISTOR (FET); HOLE CARRIERS; NANO TUBE; SCHOTTKY; SINGLE WALL; SOURCE AND DRAIN ELECTRODES;

CARBON NANOTUBES;

EID: 45749152955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949075     Document Type: Article

References (13)

1. E. S. Snow, J. P. Novak, P. M. Campbell, and D. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1564291 82, 2145 (2003).
2. M. Shiraishi, T. Takenobu, T. Iwai, Y. Iwasa, H. Kataura, and M. Ata, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2004.06.130 394, 110 (2004).
3. Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, and T. Mizutani, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.42.4116 42, 4116 (2003).
4. N. R. Franklin, Q. Wang, T. W. Tombler, A. Javey, M. Shim, and H. Dai, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1497710 81, 913 (2002).
5. S. Huang, M. Woodson, R. Smalley, and J. Liu, Nano Lett. NALEFD 1530-6984 10.1021/nl049691d 4, 1025 (2004).
6. Y. Murakami, Y. Miyauchi, S. Chiashi, and S. Maruyama, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/S0009-2614(03)00687-0 374, 53 (2003).
7. S. Maruyama, R. Kojima, Y. Miyauchi, S. Chiashi, and M. Kohno, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/S0009-2614(02)00838-2 360, 229 (2002).
8. N. Inami, M. A. Mohamed, E. Shikoh, and A. Fujiwara, Sci. Technol. Adv. Mater. STAMCV 1468-6996 8, 292 (2007).
9. M. A. Mohamed, N. Inami, E. Shikoh, Y. Yamamoto, H. Hori, and A. Fujiwara, " Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes.," Sci. Technol. Adv. Mater. STAMCV 1468-6996 (to be published).
10. M. S. Dresselhaus, G. Dresselhaus, R. Saito, and A. Jorio, Phys. Rep. PRPLCM 0370-1573 10.1016/j.physrep.2004.10.006 409, 47 (2005).
11. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.87. 256805 87, 256805 (2001).
12. S. Nakamura, M. Ohishi, M. Shiraishi, T. Takenobu, Y. Iwasa, and H. Kataura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2219389 89, 013112 (2006).
13. T. Fukao, S. Nakamura, H. Kataura, and M. Shiraishi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.45.6524 45, 6524 (2006).