Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistosrs: Scaling and comparison with Sc-contacted devices

Nano Letters

Volumn 9, Issue 12, 2009, Pages 4209-4214

  Ding, Li ^a   Wang, Sheng ^a   Zhang, Zhiyong ^a   Zeng, Qingsheng ^a   Wang, Zhenxing ^a   Pei, Tian ^a   Yang, Leijing ^a   Liang, Xuelei ^a   Shen, Jun ^a   Chen, Qing ^a   Cui, Rongli ^b   Li, Yan ^b   Peng, Lian Mao ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; ENERGY CONSUMPTION; FIELD-EFFECT; GATE LENGTH SCALING; HIGH-QUALITY OHMIC CONTACTS; LINEAR OUTPUT; LOW-TEMPERATURE MEASUREMENTS; PERFECT CONTACT; QUANTUM CONDUCTANCE; ROOM TEMPERATURE; SELF-ALIGNED; SI-BASED DEVICES; SINGLE-WALLED; SPEED SCALING; THEORETICAL LIMITS; TOP-GATE;

CARBON NANOTUBES; CONDUCTION BANDS; ELECTRIC CONTACTORS; ELECTRON MOBILITY; MESFET DEVICES; OHMIC CONTACTS; SCANDIUM; SINGLE-WALLED CARBON NANOTUBES (SWCN); TEMPERATURE MEASUREMENT; YTTRIUM;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; SCANDIUM; YTTRIUM;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; MICROELECTRODE; NANOTECHNOLOGY; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROELECTRODES; NANOTECHNOLOGY; NANOTUBES, CARBON; SCANDIUM; TRANSISTORS, ELECTRONIC; YTTRIUM;

EID: 71949099009     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9024243     Document Type: Article

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