Characterization of the junction capacitance of metal-semiconductor carbon nanotube Schottky contacts

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Tseng, Yu Chih ^a,b   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CAPACITANCE-VOLTAGE TECHNIQUES; ELECTRICAL JUNCTIONS; ELECTROSTATIC SIMULATIONS; JUNCTION CAPACITANCES; ONE-DIMENSIONAL DENSITY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SEMICONDUCTOR CARBON NANOTUBES; SMALL AREA;

CAPACITANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

CARBON NANOTUBES;

EID: 75749152560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3277182     Document Type: Article

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