Quantitative experimental analysis of schottky barriers and Poole-Frenkel emission in carbon nanotube devices

IEEE Transactions on Nanotechnology

Volumn 8, Issue 3, 2009, Pages 355-360

  Perello, David ^a   Bae, Dong Jae ^b   Kim, Moon J ^c   Cha, Dongkyu ^c   Jeong, Seung Yol ^b   Kang, Bo Ram ^b   Yu, Woo Jong ^b   Lee, Young Hee ^b   Yun, Minhee ^a  

^a University of Pittsburgh   (United States)

^b Sungkyunkwan University   (South Korea)

^c The University of Texas at Dallas   (United States)

Author keywords

Carbon nanotubes (CNTs); Manufacturing; Nanoarchitecture

Indexed keywords

BETHE THEORY; CARBON NANOTUBE DEVICES; CARBON NANOTUBE FET; DOMINANT MECHANISM; DRAIN ELECTRODES; EXPERIMENTAL ANALYSIS; IDEALITY FACTORS; IMAGE CHARGE LOWERING; MANUFACTURING; METAL SOURCE AND DRAIN; MULTIPLE DEVICES; NANOARCHITECTURE; PHYSICAL ASSUMPTIONS; POOLE-FRENKEL EMISSION; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SINGLE-WALLED; TEMPERATURE REGIMES;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; ENERGY MANAGEMENT; MESFET DEVICES; OHMIC CONTACTS; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILVER; SINGLE-WALLED CARBON NANOTUBES (SWCN); THERMIONIC EMISSION; TRANSPORT PROPERTIES;

CARBON NANOTUBES;

EID: 67249160689     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2008804     Document Type: Article

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