Tuning from thermionic emission to ohmic tunnel contacts via doping in schottky-barrier nanotube transistors

Nano Letters

Volumn 6, Issue 9, 2006, Pages 2158-2162

  Chen, Yung Fu ^a   Fuhrer, Michael S ^a  

^a University of Maryland   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; HIGH-POWER TREATMENT; OHMIC TUNNELS; SCHOTTKY-BARRIER NANOTUBES;

CARBON NANOTUBES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; THERMIONIC EMISSION; THERMOANALYSIS;

TRANSISTORS;

NANOTUBE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; MICROELECTRODE; SEMICONDUCTOR; TEMPERATURE;

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICROELECTRODES; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOTUBES; TEMPERATURE; TRANSISTORS;

EID: 33749661760     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl061379b     Document Type: Article

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