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Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

Analysis of hopping conduction in semiconducting and metallic carbon nanotube devices

(7) Perello, David J a Yu, Woo Jong b Bae, Dong Jae b Chae, Seung Jin b Kim, M J c Lee, Young Hee b Yun, Minhee a

a University of Pittsburgh (United States)

b Sungkyunkwan University (South Korea)

c The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONSTANT DENSITY; E-BEAM LITHOGRAPHY; ELECTRON EXPOSURE; ELECTRON LOCALIZATIONS; EXPONENTIAL DEPENDENCE; GATE VOLTAGES; HOPPING CONDUCTION; HOPPING DEFECTS; LIMITING CURRENT; LOCALIZATION LENGTH; MAJORITY CARRIERS; METALLIC CARBON NANOTUBES; METALLIC DEVICES; METALLIC NANOTUBES; NANOTUBE CHANNELS; NANOTUBE DEVICES; P-TYPE; POOLE-FRENKEL; SEMI-CONDUCTING NANOTUBES; SINGLE-WALLED CARBON; TEMPERATURE RANGE;

ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 67650215335 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3151916 Document Type: Conference Paper

Times cited : (15)

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