Schottky barriers in carbon nanotube heterojunctions

Physical Review Letters

Volumn 85, Issue 1, 2000, Pages 150-153

  Odintsov, Arkadi A ^a,b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARBON; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; MOLECULAR DYNAMICS; NANOTUBES; SEMICONDUCTOR DOPING;

COULOMB INTERACTION; SCHOTTKY BARRIER;

HETEROJUNCTIONS;

EID: 0034225723     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.150     Document Type: Article

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13. 2/8. This amounts to ∼6% for the junctions with χ ∼ 40° considered in Ref. [9].
14. In Eq. (3) ρ is averaged over few atomic distances. Our approach does not describe phenomena at atomic length scale, for instance, the Friedel oscillations.
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