Band structure modulation by carrier doping in random-network carbon nanotube transistors

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Nakamura, Shuichi ^a   Ohishi, Megumi ^a   Shiraishi, Masashi ^a   Takenobu, Taishi ^c   Iwasa, Yoshihiro ^c   Kataura, Hiromichi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARBON NANOTUBES; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; MODULATION;

BAND STRUCTURE MODULATION; CARRIER DOPING; RANDOM-NETWORK SINGLE-WALLED CARBON NANOTUBE FIELD EFFECT TRANSISTORS (RN-SWNT-FET); SOURCE-DRAIN VOLTAGES;

SCHOTTKY BARRIER DIODES;

EID: 33745788571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219389     Document Type: Article

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