Fabrication of axial and radial heterostructures for semiconductor nanowires by using selective-area metal-organic vapor-phase epitaxy

Journal of Nanotechnology

Volumn , Issue , 2012, Pages

  Hiruma, K ^a   Tomioka, K ^a   Mohan, P ^a   Yang, L ^a   Noborisaka, J ^a   Hua, B ^a   Hayashida, A ^a   Fujisawa, S ^a   Hara, S ^a   Motohisa, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC COMPOSITIONS; CORE SHELL STRUCTURE; CRYSTALLOGRAPHIC ORIENTATIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAAS; GAAS/ALGAAS; II-IV SEMICONDUCTORS; INGAAS QUANTUM WELLS; INP; LASER EMISSION; MASK OPENING; NANOWIRE WAVEGUIDES; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE SPECTRUM; SEMICONDUCTOR NANOWIRE; SURFACE PASSIVATION;

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FABRICATION; GALLIUM ARSENIDE; HETEROJUNCTIONS; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84855362161     PISSN: 16879503     EISSN: 16879511     Source Type: Journal    
DOI: 10.1155/2012/169284     Document Type: Review

References (96)

1. Wagner R. S., Ellis W. C., Vapor-liquid-solid mechanism of single crystal growth Applied Physics Letters 1964 4 5 89 90
2. Bootsma G. A., Gassen H. J., A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane Journal of Crystal Growth 1971 10 3 223 234
3. Givargizov E. I., Fundamental aspects of VLS growth Journal of Crystal Growth 1975 31 20 30
4. Kasahara J., Kajiwara K., Yamada T., GaAs whiskers grown by a thermal decomposition method Journal of Crystal Growth 1977 38 1 23 28
5. Morales A. M., Lieber C. M., A laser ablation method for the synthesis of crystalline semiconductor nanowires Science 1998 279 5348 208 211 (Pubitemid 28103874)
6. Li C., Zhang D., Han S., Liu X., Tang T., Zhou C., Diameter-controlled growth of single-crystalline In 2 O 3 nanowires and their electronic properties Advanced Materials 2003 15 2 143 146
7. Han W., Fan S., Li Q., Hu Y., Synthesis of gallium nitride nanorods through a carbon nanotube- confined reaction Science 1997 277 5330 1287 1289 (Pubitemid 27449077)
8. Huang M. H., Wu Y., Feick H., Tran N., Weber E., Yang P., Catalytic growth of zinc oxide nanowires by vapor transport Advanced Materials 2001 13 2 113 116 (Pubitemid 32188783)
9. Haraguchi K., Katsuyama T., Hiruma K., Ogawa K., GaAs p-n junction formed in quantum wire crystals Applied Physics Letters 1992 60 6 745 747
10. Li C., Zhang D., Liu X., Han S., Tang T., Han J., Zhou C., In 2 O 3 nanowires as chemical sensors Applied Physics Letters 2003 82 10 1613 1615
11. Wang Z. L., Song J., Piezoelectric nanogenerators based on zinc oxide nanowire arrays Science 2006 312 5771 243 246
12. Tian B., Zheng X., Kempa T. J., Fang Y., Yu N., Yu G., Huang J., Lieber C. M., Coaxial silicon nanowires as solar cells and nanoelectronic power sources Nature 2007 449 7164 885 889 (Pubitemid 47598610)
13. Bjrk M. T., Ohlsson B. J., Thelander C., Persson A. I., Deppert K., Wallenberg L. R., Samuelson L., Nanowire resonant tunneling diodes Applied Physics Letters 2002 81 23 4458 4460
14. Cui Y., Zhong Z., Wang D., Wang W. U., Lieber C. M., High performance silicon nanowire field effect transistors Nano Letters 2003 3 2 149 152 (Pubitemid 37130527)
15. Gunawan O., Guha S., Characteristics of vapor-liquid-solid grown silicon nanowire solar cells Solar Energy Materials and Solar Cells 2009 93 8 1388 1393
16. i Morral A. F., Spirkoska D., Arbiol J., Heigoldt M., Morante J. R., Abstreiter G., Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires Small 2008 4 7 899 903
17. Hei M., Gustafsson A., Conesa-Boj S., Peir F., Morante J. R., Abstreiter G., Arbiol J., Samuelson L., Fontcuberta I Morral A., Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures Nanotechnology 2009 20 7
18. Kim B.-S., Koo T.-W., Lee J.-H., Kim D. S., Jung Y. C., Hwang S. W., Choi B. L., Lee E. K., Kim J. M., Whang D., Catalyst-free growth of single-crystal silicon and germanium nanowires Nano Letters 2009 9 2 864 869
19. Hamano T., Hirayama H., Aoyagi Y., New technique for fabrication of two-dimensional photonic bandgap crystals by selective epitaxy Japanese Journal of Applied Physics, Part 2 1997 36 3 L286 L288
20. Motohisa J., Takeda J., Inari M., Noborisaka J., Fukui T., Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE Physica E 2004 23 3-4 298 304
21. Yoshizawa M., Kikuchi A., Mori M., Fujita N., Kishino K., Growth of self-organized GaN nanostructures on Al 2 O 3 (0001) by RF-radical source molecular beam epitaxy Japanese Journal of Applied Physics, Part 2 1997 36 4 L459 L462
22. Yoshizawa M., Kikuchi A., Fujita N., Kushi K., Sasamoto H., Kishino K., Self-organization of GaN/Al 0.18 Ga 0.82 N multi-layer nano-columns on (0001) Al 2 O 3 by RF molecular beam epitaxy for fabricating GaN quantum disks Journal of Crystal Growth 1998 189-190 138 141 (Pubitemid 128420730)
23. Sekiguchi H., Kishino K., Kikuchi A., Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate Applied Physics Letters 2010 96 23
24. Park W. I., Kim D. H., Jung S.-W., Yi G.-C., Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods Applied Physics Letters 2002 80 22 4232 (Pubitemid 34690751)
25. An S. J., Chae J. H., Yi G.-C., Park G. H., Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays Applied Physics Letters 2008 92 12
26. Paetzelt H., Gottschalch V., Bauer J., Benndorf G., Wagner G., Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates Journal of Crystal Growth 2008 310 23 5093 5097
27. Sladek K., Klinger V., Wensorra J., Akabori M., Hardtdegen H., Grtzmacher D., MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires Journal of Crystal Growth 2010 312 5 635 640
28. Yang L., Motohisa J., Takeda J., Tomioka K., Fukui T., Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy Applied Physics Letters 2006 89 20
29. Noborisaka J., Motohisa J., Hara S., Fukui T., Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy Applied Physics Letters 2005 87 9 1 3 (Pubitemid 41284562)
30. Hayashida A., Sato T., Hara S., Motohisa J., Hiruma K., Fukui T., Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires Journal of Crystal Growth 2010 312 24 3592 3598
31. Mohan P., Motohisa J., Fukui T., Fabrication of InPInAsInP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy Applied Physics Letters 2006 88 13
32. Hua B., Motohisa J., Kobayashi Y., Hara S., Fukui T., Single GaAs/GaAsP coaxial core-shell nanowire lasers Nano Letters 2009 9 1 112 116
33. Fujisawa S., Sato T., Hara S., Motohisa J., Hiruma K., Fukui T., Growth and characterization of a GaAs quantum well buried in GaAsP/GaAs vertical heterostructure nanowires by selective-area metal organic vapor phase epitaxy Japanese Journal of Applied Physics 2011 50 4, part 2, article 04DH03
34. Biegelsen D. K., Bringans R. D., Northrup J. E., Swartz L.-E., Reconstructions of GaAs(111) surfaces observed by scanning tunneling microscopy Physical Review Letters 1990 65 4 452 455
35. Yoshimura M., Tomioka K., Hiruma K., Hara S., Motohisa J., Fukui T., Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy Japanese Journal of Applied Physics 2010 49 4
36. Nishida T., Uwai K., Kobayashi Y., Kobayashi N., Phase diagram of GaAs (111)B surface during metal-organic chemical vapor deposition measured by surface photo-absorption Japanese Journal of Applied Physics, Part 1 1995 34 12 6326 6330
37. Noborisaka J., Motohisa J., Fukui T., Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy Applied Physics Letters 2005 86 21 1 3 (Pubitemid 40861540)
38. Bhattacharya P., Properties of Lattice-Matched and Strained Indium Gallium Arsenide 1993 London, UK IE EMIS Data Reviews Series No. 8
39. Galeuchet Y. D., Roentgen P., Graf V., GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures Journal of Applied Physics 1990 68 2 560 568
40. Takebe T., Fujii M., Yamamoto T., Fujita K., Watanabe T., Orientation-dependent Ga surface diffusion in molecular beam epitaxy of GaAs on GaAs patterned substrates Journal of Applied Physics 1997 81 11 7273 7281 (Pubitemid 127626665)
41. Sasaki T., Kitamura M., Mito I., Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures Journal of Crystal Growth 1993 132 3-4 435 443
42. Martini S., Quivy A. A., Tabata A., Leite J. R., Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces Journal of Applied Physics 2001 90 5 2280 2289 (Pubitemid 33600642)
43. Yang L., Motohisa J., Takeda J., Tomioka K., Fukui T., Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence Nanotechnology 2007 18 10
44. Ouattara L., Mikkelsen A., Skld N., Eriksson J., Knaapen T., Cavar E., Seifert W., Samuelson L., Lundgren E., GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy Nano Letters 2007 7 9 2859 2864 (Pubitemid 47522450)
45. Ishikawa K., Yamamoto N., Tateno K., Watanabe Y., Characterization of individual GaAs/AlGaAs self-standing nanowires by cathodoluminescence technique using transmission electron microscope Japanese Journal of Applied Physics, Part 1 2008 47 8 6596 6600
46. Chen C., Braidy N., Couteau C., Fradin C., Weihs G., Lapierre R., Multiple quantum well AlGaAs nanowires Nano Letters 2008 8 2 495 499 (Pubitemid 351346006)
47. Heinrich J., Huggenberger A., Heindel T., Reitzenstein S., Hfling S., Worschech L., Forchel A., Single photon emission from positioned GaAs/AlGaAs photonic nanowires Applied Physics Letters 2010 96 21
48. Nakayama M., Hirao T., Hasegawa T., Characteristics of photoluminescence due to exciton-exciton scattering in GaAs/AlAs multiple quantum wells Journal of Applied Physics 2009 105 12
49. Dingle R., Wiegmann W., Henry C. H., Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructures Physical Review Letters 1974 33 14 827 830
50. Sze S. M., Physics of Semiconductor Devices 1981 2nd New York, NY, USA John Wiley Sons
51. Tambe M. J., Allard F., Grad eak S., Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy Journal of Physics: Conference Series 2010 209
52. Mohseni P. K., Maunders C., Botton G. A., LaPierre R. R., GaP/GaAsP/GaP core-multishell nanowire heterostructures on (111) silicon Nanotechnology 2007 18 44
53. Chen C., Plante M. C., Fradin C., LaPierre R. R., Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures Journal of Materials Research 2006 21 11 2801 2809 (Pubitemid 44816709)
54. Svensson C. P. T., Seifert W., Larsson M. W., Wallenberg L. R., Stangl J., Bauer G., Samuelson L., Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications Nanotechnology 2005 16 6 936 939 (Pubitemid 40666606)
55. Seifert W., Borgstrm M., Deppert K., Dick K. A., Johansson J., Larsson M. W., Mrtensson T., Skold N., Svensson C. P. T., Wacaser B. A., Wallenberg L. R., Samuelson L., Growth of one-dimensional nanostructures in MOVPE Journal of Crystal Growth 2004 272 14 211 220
56. Tietjen J. J., Amick J. A., The preparation and properties of vapor-deposited epitaxial GaAs1-xPx using arsine and phosphine Journal of the Electrochemical Society 1966 113 7 724 728
57. Roth A. P., Charbonneau S., Goodchild R. G., Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxy Journal of Applied Physics 1983 54 9 5350 5357 (Pubitemid 14450353)
58. Ando S., Chang S. S., Fukui T., Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structures Journal of Crystal Growth 1991 115 14 69 73
59. Kodama S., Koyanagi S., Hashizume T., Hasegawa H., Silicon interlayer based surface passivation of near-surface quantum wells Journal of Vacuum Science and Technology B 1995 13 4 1794 1800
60. Moison J. M., Elcess K., Houzay F., Marzin J. Y., Gérard J. M., Barthe F., Bensoussan M., Near-surface GaAs/Ga 0.7 Al 0.3 As quantum wells: interaction with the surface states Physical Review B 1990 41 18 12945 12948
61. Seo H. W., Bae S. Y., Park J., Yang H., Park K. S., Kim S., Strained gallium nitride nanowires Journal of Chemical Physics 2002 116 21 9492 9499 (Pubitemid 34632539)
62. Lauhon L. J., Gudlksen M. S., Wang D., Lieber C. M., Epitaxial core-shell and core-multishell nanowire heterostructures Nature 2002 420 6911 57 61 (Pubitemid 35291437)
63. Qian F., Li Y., Gradeak S., Wang D., Barrelet C. J., Lieber C. M., Gallium nitride-based nanowire radial heterostructures for nanophotonics Nano Letters 2004 4 10 1975 1979
64. Qian F., Gradeak S., Li Y., Wen C.-Y., Lieber C. M., Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes Nano Letters 2005 5 11 2287 2291 (Pubitemid 41698954)
65. Mohan P., Motohisa J., Fukui T., Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays Nanotechnology 2005 16 12 2903 2907 (Pubitemid 41677049)
66. Mohan P., Motohisa J., Fukui T., Realization of conductive InAs nanotubes based on lattice-mismatched InP/InAs core-shell nanowires Applied Physics Letters 2006 88 1
67. Hara S., Motohisa J., Noborisaka J., Takeda J., Fukui T., Photoluminescence from single hexagonal nano-wire grown by selective area MOVPE Institute of Physics Conference Series 2005 184, section 5 393 398
68. Van de Walle C. G., Band lineups and deformation potentials in the model-solid theory Physical Review B 1989 39 3 1871 1883
69. Kajikawa Y., Hata M., Isu T., Optical matrix elements in (110)-oriented quantum wells Japanese Journal of Applied Physics, Part 1 1991 30 9 1944 1945
70. Chuang S. L., Efficient band-structure calculations of strained quantum wells Physical Review B 1991 43 12 9649 9661
71. Sugawara M., Okazaki N., Fujii T., Yamazaki S., Conduction-band and valence-band structures in strained In1-xGaxAs/InP quantum wells on (001) InP substrates Physical Review B 1993 48 11 8102 8118
72. Pal B., Goto K., Ikezawa M., Masumoto Y., Mohan P., Motohisa J., Fukui T., Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires Applied Physics Letters 2008 93 7
73. Duan X., Huang Y., Agarwal R., Lieber C. M., Single-nanowire elecctrically driven lasers Nature 2003 421 6920 241 245 (Pubitemid 36139123)
74. Huang M. H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., Yang P., Room-temperature ultraviolet nanowire nanolasers Science 2001 292 5523 1897 1899 (Pubitemid 32538361)
75. Johnson J. C., Choi H.-J., Knutsen K. P., Schaller R. D., Yang P., Saykally R. J., Single gallium nitride nanowire lasers Nature Materials 2002 1 2 106 110
76. Choi H.-J., Johnson J. C., He R., Lee S. K., Kim F., Pauzauskie P., Goldberger J., Saykally R. J., Yang P., Self-organized GaN quantum wire UV lasers Journal of Physical Chemistry B 2003 107 34 8721 8725
77. Gradeak S., Qian F., Li Y., Park H.-G., Lieber C. M., GaN nanowire lasers with low lasing thresholds Applied Physics Letters 2005 87 17 1 3 (Pubitemid 41717003)
78. Cao B., Jiang Y., Wang C., Wang W., Wang L., Niu M., Zhang W., Li Y., Lee S. T., Synthesis and lasing properties of highly ordered CdS nanowire arrays Advanced Functional Materials 2007 17 9 1501 1508 (Pubitemid 46984709)
79. Qian F., Li Y., Gradeak S., Park H. G., Dong Y., Ding Y., Wang Z. L., Lieber C. M., Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers Nature Materials 2008 7 9 701 706
80. Chin A. H., Vaddiraju S., Maslov A. V., Ning C. Z., Sunkara M. K., Meyyappan M., Near-infrared semiconductor subwavelength-wire lasers Applied Physics Letters 2006 88 16
81. Ikejiri K., Sato T., Yoshida H., Hiruma K., Motohisa J., Hara S., Fukui T., Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy Nanotechnology 2008 19 26
82. Hua B., Motohisa J., Ding Y., Hara S., Fukui T., Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy Applied Physics Letters 2007 91 13
83. Johnson J. C., Yan H., Yang P., Saykally R. J., Optical cavity effects in ZnO nanowire lasers and waveguides Journal of Physical Chemistry B 2003 107 34 8816 8828
84. Pauzauskie P. J., Sirbuly D. J., Yang P., Semiconductor nanowire ring resonator laser Physical Review Letters 2006 96 14 1 4
85. Ogawa K., Hiruma K., Katsuyama T., Photoluminescence characteristics of GaAs nanowhiskers: effects of depletion potential The Institute of Electronics, Information and Communication Engineers Transactions on Electronics 1996 E79-C 11 1573 1578 (Pubitemid 126765055)
86. van Weert M. H. M., Wunnicke O., Roest A. L., Eijkemans T. J., Silov A. Y., Haverkort J. E. M., 'T Hooft G. W., Bakkers E. P. A. M., Large redshift in photoluminescence of p -doped InP nanowires induced by Fermi-level pinning Applied Physics Letters 2006 88 4 1 3 (Pubitemid 43168221)
87. van Vugt L. K., Ruhle S., Vanmaekelbergh D., Phase-correlated nondirectional laser emission from the end facets of a ZnO nanowire Nano Letters 2006 6 12 2707 2711 (Pubitemid 46129559)
88. Mrtensson T., Patrik C., Svensson T., Wacaser B. A., Larsson M. W., Seifert W., Deppert K., Gustafsson A., Wallenberg L. R., Epitaxial III-V nanowires on silicon Nano Letters 2004 4 10 1987 1990
89. Mandl B., Stangl J., Mrtensson T., Mikkelsen A., Eriksson J., Karlsson L. S., Bauer G., Samuelson L., Seifert W., Au-free epitaxial growth of InAs nanowires Nano Letters 2006 6 8 1817 1821 (Pubitemid 44327553)
90. Mrtensson T., Wagner J. B., Hilner E., Mikkelsen A., Thelander C., Stangl J., Ohlsson B. J., Gustafsson A., Lundgren E., Samuelson L., Seifert W., Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self-assembled organic coatings Advanced Materials 2007 19 14 1801 1806 (Pubitemid 47167422)
91. Moewe M., Chuang L. C., Crankshaw S., Chase C., Chang-Hasnain C., Atomically sharp catalyst-free wurtzite GaAsAlGaAs nanoneedles grown on silicon Applied Physics Letters 2008 93 2
92. Bjrk M. T., Schmid H., Bessire C. D., Moselund K. E., Ghoneim H., Karg S., Lrtscher E., Riel H., Si-InAs heterojunction Esaki tunnel diodes with high current densities Applied Physics Letters 2010 97 16
93. Tomioka K., Motohisa J., Hara S., Fukui T., Control of InAs nanowire growth directions on Si Nano Letters 2008 8 10 3475 3480
94. Tomioka K., Kobayashi Y., Motohisa J., Hara S., Fukui T., Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate Nanotechnology 2009 20 14
95. Tanaka T., Tomioka K., Hara S., Motohisa J., Sano E., Fukui T., Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates Applied Physics Express 2010 3 2
96. Tomioka K., Motohisa J., Hara S., Hiruma K., Fukui T., GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si Nano Letters 2010 10 5 1639 1644