Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Nanotechnology

Volumn 20, Issue 7, 2009, Pages

  Heiß, Martin ^a,b   Gustafsson, Anders ^f   Conesa Boj, Sonia ^c   Peiró, Francesca ^c   Morante, Joan Ramon ^c,e   Abstreiter, G ^a   Arbiol, Jordi ^c,d   Samuelson, Lars ^f   Fontcuberta I Morral, Anna ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b EPFL   (Switzerland)

^c UNIVERSITY OF BARCELONA   (Spain)

^d UNIVERSITY OF BARCELONA   (Spain)

^e CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^f LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY CONCENTRATIONS; BEAM FLUXES; CATALYST-FREE; CATALYST-FREE GROWTHS; CONFOCAL MICROPHOTOLUMINESCENCE; FABRICATION PROCESS; GAAS; GROWTH CONDITIONS; HETEROSTRUCTURES; IN-SITU; INDIUM CONTENTS; OPTO-ELECTRONIC; PHOTO-LUMINESCENCE MEASUREMENTS; SELF-CATALYZED GROWTHS; SIMPLE MODELS;

CATALYSIS; CATALYSTS; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WIRES;

CRYSTALS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; NANOWIRE;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); FIELD EMISSION; GROWTH; LUMINESCENCE; MICROANALYSIS; NANOCATALYST; PHOTOLUMINESCENCE; PRIORITY JOURNAL;

EID: 65349134387     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/7/075603     Document Type: Article

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