Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate

Nanotechnology

Volumn 20, Issue 14, 2009, Pages

  Tomioka, Katsuhiro ^a   Kobayashi, Yasunori ^a   Motohisa, Junichi ^a   Hara, Shinjiroh ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE; COHERENT GROWTHS; CORE-SHELL NANOWIRES; GAAS; GAAS/ALGAAS; GROWTH MORPHOLOGIES; GROWTH ORIENTATIONS; LOW-TEMPERATURE GROWTHS; LUMINESCENCE INTENSITIES; MISFIT DISLOCATIONS; OPTOELECTRONIC INTEGRATIONS; PASSIVATION EFFECTS; PRE TREATMENTS; SELECTIVE-AREA GROWTHS; SI (1 1 1); SI SURFACES; SI(111) SUBSTRATES; SMALL DIAMETERS; VERTICALLY ALIGNED;

ELECTRIC WIRE; LUMINESCENCE; NANOWIRES; OPTICAL DEVICES; OPTICAL PROPERTIES; PASSIVATION; SEMICONDUCTING GALLIUM; SILICON;

GALLIUM ALLOYS;

GOLD NANOPARTICLE; NANOSHELL; NANOWIRE; SILICON DERIVATIVE;

ARTICLE; CHEMICAL MODIFICATION; GROWTH; LOW TEMPERATURE; MOLECULAR ELECTRONICS; MORPHOLOGY; NANOFABRICATION; PRIORITY JOURNAL; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 65549159341     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/14/145302     Document Type: Article

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