Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications

Nanotechnology

Volumn 16, Issue 6, 2005, Pages 936-939

  Svensson, C P T ^a   Seifert, W ^a   Larsson, M W ^a   Wallenberg, L R ^a   Stangl, J ^b   Bauer, G ^b   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; HETEROJUNCTIONS; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BIOMEDICAL APPLICATIONS; FLUORESCENT MARKERS; NANOWIRES; X-RAY ENERGY DISPERSIVE SPECTROMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18744377170     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/6/052     Document Type: Article

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