Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy

Nanotechnology

Volumn 19, Issue 26, 2008, Pages

  Ikejiri, Keitaro ^a   Sato, Takuya ^a   Yoshida, Hiroatsu ^a   Hiruma, Kenji ^a   Motohisa, Junichi ^a   Hara, Shinjiroh ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM ALLOYS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

GROWTH CHARACTERISTICS; METAL ORGANIC (MO); SELECTIVE AREA (SA);

MOLECULAR BEAM EPITAXY;

METAL; NANOWIRE;

ARTICLE; CALCULATION; COMPARATIVE STUDY; CRYSTAL; ENERGY TRANSFER; HIGH TEMPERATURE; NANOCHEMISTRY; NANOTECHNOLOGY; ORGANIC CHEMISTRY; PRIORITY JOURNAL; PROCESS DEVELOPMENT; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR;

EID: 44949219139     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/26/265604     Document Type: Article

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