Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence

Nanotechnology

Volumn 18, Issue 10, 2007, Pages

  Yang, Lin ^a   Motohisa, Junichi ^a   Takeda, Junichiro ^a   Tomioka, Katsuhiro ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

NANOPILLARS; STANDARD DEVIATION;

SEMICONDUCTOR QUANTUM WELLS;

INDIUM;

ARTICLE; GROWTH RATE; PHOTOLUMINESCENCE; PIEZOELECTRICITY; PRIORITY JOURNAL; QUANTUM CHEMISTRY; TEMPERATURE DEPENDENCE; WAVEFORM;

EID: 33947512729     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/10/105302     Document Type: Article

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