Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Noborisaka, Jinichiro ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE REACTIONS;

NANOWIRES; SURFACE DIFFUSION; SURFACE PASSIVATION; TRANSPORT MEASUREMENTS;

NANOSTRUCTURED MATERIALS;

EID: 20844437550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935038     Document Type: Article

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