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Volumn 49, Issue 4 PART 2, 2010, Pages

Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy

(6) Yoshimura, Masatoshi a Tomioka, Katsuhiro a Hiruma, Kenji a Hara, Shinjiro a Motohisa, Junichi a Fukui, Takashi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CATALYST-FREE; GAAS; MASK OPENING; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE SPECTRUM;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; NANOWIRES; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77952709242 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DH08 Document Type: Article

Times cited : (29)

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