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Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5093-5097

Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates

(5) Paetzelt, H a Gottschalch, V a Bauer, J a Benndorf, G a Wagner, G a

a UNIVERSITY OF LEIPZIG (Germany)

Author keywords

A1. Nanostructures; A2. Selective area growth; A3. Metalorganic vapor phase epitaxy; B1. Nanowires

Indexed keywords

CRYSTAL GROWTH; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DEVICES; ORGANOMETALLICS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SILICON NITRIDE; SIMULATED ANNEALING; SUBSTRATES; VAPORS;

A1. NANOSTRUCTURES; A2. SELECTIVE-AREA GROWTH; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NANOWIRES; CIRCULAR OPENINGS; FREE GROWTHS; GAAS SUBSTRATES; GROWTH BEHAVIORS; GROWTH CONDITIONS; GROWTH DIRECTIONS; GROWTH PARAMETERS; HETERO EPITAXIES; METAL ORGANIC VAPOR-PHASE EPITAXIES; MOVPE GROWTHS; RADIAL HETEROSTRUCTURES; SUBSTRATE SURFACES; TRANSMISSION ELECTRONS; TRIANGULAR LATTICES; UNIFORM ARRAYS; V/III RATIOS; WET CHEMICALS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 56249104396 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.06.065 Document Type: Article

Times cited : (40)

References (12)

1
- 0038224137
- Hiruma K., Yazawa M., Haraguchi K., Ogawa K., Katsuyama T., Koguchi M., and Kakibayashi H. J. Appl. Phys. 74 (1993) 3162
- (1993) J. Appl. Phys. , vol.74 , pp. 3162
- Hiruma, K.¹ Yazawa, M.² Haraguchi, K.³ Ogawa, K.⁴ Katsuyama, T.⁵ Koguchi, M.⁶ Kakibayashi, H.⁷

2
- 9944235378
- Seifert W., et al. J. Crystal Growth 272 (2004) 211
- (2004) J. Crystal Growth , vol.272 , pp. 211
- Seifert, W.¹

3
- 33846404897
- Bauer J., Gottschalch V., Paetzelt H., Wagner G., Fuhrmann B., and Leipner H.S. J. Crystal Growth 298 (2007) 625
- (2007) J. Crystal Growth , vol.298 , pp. 625
- Bauer, J.¹ Gottschalch, V.² Paetzelt, H.³ Wagner, G.⁴ Fuhrmann, B.⁵ Leipner, H.S.⁶

4
- 0142155079
- Akabori M., Takeda J., Motohisa J., and Fukui T. Nanotechnology 14 (2004) 1071
- (2004) Nanotechnology , vol.14 , pp. 1071
- Akabori, M.¹ Takeda, J.² Motohisa, J.³ Fukui, T.⁴

5
- 9944256404
- Motohisa J., Noborosaka J., Takeda J., Inari M., and Fukui T. J. Crystal Growth 272 (2004) 180
- (2004) J. Crystal Growth , vol.272 , pp. 180
- Motohisa, J.¹ Noborosaka, J.² Takeda, J.³ Inari, M.⁴ Fukui, T.⁵

6
- 33846454714
- Ikejiri K., Noborisaka J., Hara S., Motohisa J., and Fukui T. J. Crystal Growth 298 (2007) 616
- (2007) J. Crystal Growth , vol.298 , pp. 616
- Ikejiri, K.¹ Noborisaka, J.² Hara, S.³ Motohisa, J.⁴ Fukui, T.⁵

7
- 20844437550
- Noborisaka J., Motohisa J., and Fukui T. Appl. Phys. Lett. 86 (2005) 213102
- (2005) Appl. Phys. Lett. , vol.86 , pp. 213102
- Noborisaka, J.¹ Motohisa, J.² Fukui, T.³

8
- 0031101672
- Hamano T., Hirayama H., and Aoyagi Y. Jpn. J. Appl. Phys. 36 (1997) L286
- (1997) Jpn. J. Appl. Phys. , vol.36
- Hamano, T.¹ Hirayama, H.² Aoyagi, Y.³

9
- 56249131550
- Horikoshi Y., Onomitsu K., and Toda T. IPAP Books 2 (2005) 83
- (2005) IPAP Books , vol.2 , pp. 83
- Horikoshi, Y.¹ Onomitsu, K.² Toda, T.³

10
- 33846443194
- Tomioka K., Mohan P., Noborisaka J., Hara S., Motohisa J., and Fukui T. J. Crystal Growth 298 (2007) 644
- (2007) J. Crystal Growth , vol.298 , pp. 644
- Tomioka, K.¹ Mohan, P.² Noborisaka, J.³ Hara, S.⁴ Motohisa, J.⁵ Fukui, T.⁶

11
- 33645522815
- Mohan P., Motohisa J., and Fukui T. Appl. Phys. Lett. 88 (2006) 013110
- (2006) Appl. Phys. Lett. , vol.88 , pp. 013110
- Mohan, P.¹ Motohisa, J.² Fukui, T.³

12
- 33646433967
- Paetzelt H., Gottschalch V., Bauer J., Herrnberger H., and Wagner G. Phys. Stat. Solidi (a) 203 (2006) 817
- (2006) Phys. Stat. Solidi (a) , vol.203 , pp. 817
- Paetzelt, H.¹ Gottschalch, V.² Bauer, J.³ Herrnberger, H.⁴ Wagner, G.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.