Photoluminescence characteristics of GaAs nanowhiskers: Effects of depletion potential

IEICE Transactions on Electronics

Volumn E79-C, Issue 11, 1996, Pages 1573-1578

  Ogawa, Kensuke ^a   Hiruma, Kenji ^a   Katsuyama, Toshio ^a  

^a HITACHI LTD   (Japan)

Author keywords

Gaas; Quantum confinement; Radiative recombination; Whisker

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH; CRYSTAL WHISKERS; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; QUANTUM THEORY; SURFACE TREATMENT;

ADAPTIVE RECOMBINATION RATE; DEPLETION POTENTIAL EFFECTS; NANOWHISKERS; PHOTOLUMINESCENCE SPECTRA; QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030291134     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. Y. Arakawa and H. Sakaki, "Multiquantum well laser and its temperature dependence of the threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, 1982.
2. E. Clausen Jr., H. G. Craighead, J. M. Worlock, J. P. Harbison, L. M. Schiavone, L. Florez, and B. P. van der Gaag, "Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs," Appl. Phys. Lett., vol. 55, no. 14, pp. 1427-1432, 1989.
3. G. Mayer, B. E. Maile, R. Germann, A. Forchel, P. Grambow, and H. P. Meier, "Time-resolved investigations of sidewall recombination in dry-etched GaAs wires," Appl. Phys. Lett., vol. 56, no. 20, pp. 2016-2018, 1990.
4. K. Ogawa, K. Haraguchi, K. Hiruma, Y. Fujisaki, T. Katsuyama, and G. Fasol, "Spectral and temporal features of photoluminescence of gallium arsenide quantum-wire crystals," J. Lumin., vol. 53, pp. 387-390, 1992.
5. 1-xAs quantum dots," Appl. Phys. Lett., vol. 61, no. 8, pp. 946-948, 1992.
6. G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, "Variational calculations on a quantum well in an electric field," Phys. Rev., vol. B28, no. 6, pp. 3241-3245, 1983.
7. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi, and H. Kakibayashi, "Growth and optical properties of nanometer-scale GaAs and InAs whiskers," J. Appl. Phys., vol. 77, no. 2, pp. 447-462, 1995.
8. E. Yablonovitch, C. J. Sandroff, R. Bhat, and T. Gmitter, "Nearly ideal electronic properties of sulfide coated GaAs surfaces," Appl. Phys. Lett., vol. 51, no. 6, pp. 439-441, 1987.
9. E. Yablonovitch, B. J. Skromme, R. Bhat, J. P. Harbison, and T. J. Gmitter, "Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces," Appl. Phys. Lett., vol. 54, no. 6, pp. 555-557, 1989.
10. H. -J. Polland, L. Schultheis, J. Kuhl, E. O. Göbel, and C. W. Tu, "Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect," Phys. Rev. Lett., vol. 55, no. 23, pp. 2610-2613, 1985.
11. 1-xAs heterojunction. I. Subband structure and light-scattering spectra," J. Phys. Soc. Japan, vol. 51, no. 12, pp. 3893 3899, 1982.
12. 1-xAs heterojunction. II. Low temperature mobility," J. Phys. Soc. Japan, vol. 51, no. 12, pp. 3900-3906, 1982.
13. S. E. Laux, D. J. Frank, and F. Stern, "Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure," Surf. Sci., vol. 196, pp. 101-106, 1988.
14. M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, "Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure," Phys. Rev. Lett., vol. 60, no. 6, pp. 535-537, 1988.
15. C. Weisbuch and R. G. Ulbrich, "Resonant light scattering mediated by excitonic polaritons in semiconductors," in Topics in Applied Physics (Light Scattering in Solids III), ed. M. Cardona and G. Guntherodt, pp. 207-263, Springer-Verlag, Berlin, 1982.