Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 298-304

  Motohisa, J ^a   Takeda, J ^a   Inari, M ^a   Noborisaka, J ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Metalorganic vapor phase epitaxy; Nanowires; Photonic crystals; Selective area growth

Indexed keywords

ARRAYS; CRYSTAL GROWTH; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

NANOWIRES; PHOTONIC CRYSTALS; SELECTIVE AREA GROWTH;

GALLIUM COMPOUNDS;

EID: 3142747539     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.279     Document Type: Conference Paper

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