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Volumn 3, Issue 2, 2010, Pages

Vertical surrounding gate transistors using single InAs nanowires grown on Si substrates

Author keywords

[No Author keywords available]

Indexed keywords

GATE-ALL-AROUND; INAS; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; METAL-ORGANIC VAPOR PHASE EPITAXY; N-CHANNEL; ON-OFF RATIO; SI SUBSTRATES; SUBTHRESHOLD SLOPE; SURROUNDING GATE TRANSISTORS;

EID: 76949087894     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.025003     Document Type: Article
Times cited : (97)

References (21)
  • 15
    • 32044458180 scopus 로고    scopus 로고
    • V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. Gösele: Small 2 (2006) 85.
    • V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. Gösele: Small 2 (2006) 85.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.