MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

Journal of Crystal Growth

Volumn 312, Issue 5, 2010, Pages 635-640

  Sladek, K ^a   Klinger, V ^a   Wensorra, J ^a   Akabori, M ^a,b   Hardtdegen, H ^a   Grutzmacher D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

B2. SEMICONDUCTING III-V MATERIALS; METAL-ORGANIC VAPOR PHASE EPITAXY; NANO-MATERIALS; SELECTIVE EPITAXY; SEMI CONDUCTING III-V MATERIALS;

ARSENIC; ASPECT RATIO; CRYSTAL GROWTH; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM ARSENIDE; MODULATION; NANOSTRUCTURED MATERIALS; NANOWIRES; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 74549136353     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.026     Document Type: Article

References (15)

1. Indlekofer K.-M., and Schäpers Th. Condmat (2007) 0703520
2. Noborisaka J., Motohisa J., and Fukui T. Applied Physics Letters 86 (2005) 213102-213103
3. Seifert W., Borgström M., Deppert K., Dick K.A., Johansson J., Larsson M.W., Mårtensson T., Sköld N., Patrik C., Svensson T., Wacaser B.A., Reine Wallenberg L., and Samuelson L. Journal of Crystal Growth 272 (2004) 211-220
4. Hiruma K., Yazawa M., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. Journal of Applied Physics 77 (1995) 447-462
5. Motohisa J., Noborisaka J., Takeda J., Inari M., and Fukui T. Journal of Crystal Growth 272 (2004) 180-185
6. Kaluza A., Schwarz A., Gauer D., Hardtdegen H., Nastase N., Lüth H., Schäpers T., Meertens D., Maciel A., Ryan J., and O'Sullivan E. Journal of Crystal Growth 221 (2000) 91-97
7. Hardtdegen H., Prostivsek M., Menhal H., Zettler J.-T., Richter W., and Schmitz D. Journal of Crystal Growth 195 (1998) 211-216
8. Namatsu H., Takahashi Y., Yamazaki K., Yamaguchi T., Nagase M., and Kurihara K. Journal of Vacuum Science and Technology B 16 (1998) 69-76
9. Kamon K., Shimazu M., Kimura K., Mihara M., and Ishii M. Journal of Crystal Growth 84 (1987) 126-132
10. Paetzelt H., Gottschalch V., Bauer J., Benndorf G., and Wagner G. Journal of Crystal Growth 310 (2008) 5093-5097
11. Tomioka K., Mohan P., Noborisaka J., Hara S., Motohisa J., and Fukui T. Journal of Crystal Growth 298 (2007) 644
12. Tomioka K., Motohisa J., Hara S., and Fukui T. Japanese Journal of Applied Physics 46 (2007) L1102
13. Dauelsberg M., Hardtdegen H., Kadinski L., Kaluza A., and Kaufmann P. Journal of Crystal Growth 223 (2001) 21-28
14. Ikejiri K., Noborisaka J., Hara S., Motohisa J., and Fukui T. Journal of Crystal Growth 298 (2007) 616-619
15. Ando S., and Fukui T. Journal of Crystal Growth 98 (1989) 646-652