Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 138-141

  Yoshizawa, Masaki ^a   Kikuchi, Akihiko ^a   Fujita, Nobuhiko ^a   Kushi, Kouichi ^a   Sasamoto, Hajime ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

GaN nano column; Multi quantum disk; RF MBE; Self organization

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

MULTIQUANTUM DISKS (MQD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032093259     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00188-2     Document Type: Article

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