Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Yang, L ^a   Motohisa, J ^a   Takeda, J ^a   Tomioka, K ^a   Fukui, T ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STOICHIOMETRY;

AXIAL DIRECTIONS; NANOPILLARS; QUANTUM CONFINEMENT EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 33751087737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372710     Document Type: Article

References (12)

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