Phase change materials in non-volatile storage

Materials Today

Volumn 14, Issue 12, 2011, Pages 600-607

  Ielmini, Daniele ^a   Lacaita, Andrea L ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; CELL PERFORMANCE; DATA RETENTION; ELECTRONIC STORAGE; FUTURE PERSPECTIVES; HIGH-SPEED; LOW VOLTAGE OPERATION; NANO SCALE; NON-VOLATILE; PHASE CHANGE; PHASE CHANGES; SEMICONDUCTOR MEMORY; TRANSPORT PHENOMENA;

BUOYANCY; OPTICAL DATA STORAGE; SEMICONDUCTOR STORAGE; STORAGE (MATERIALS);

PHASE CHANGE MEMORY;

EID: 84855232228     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-7021(11)70301-7     Document Type: Review

References (105)

1. ITRS 2009 available online at http://www.itrs.net
2. J.F. Dewald et al. J Electrochemical Society 109 1962 243C
3. R.G. Neale et al. Electronics 28 1970 56
4. S. Lai, T. Lowrey IEEE IEDM Dig 2001 803
5. F. Bedeschi et al. IEEE VLSI Tech Dig 2004 442
6. S.J. Ahn et al. IEEE IEDM Dig 2004 10
7. Eilert et al. IEEE IMW Dig 2009 72
8. G.W. Burr et al. IBM J Res Dev 52 2008 449
9. S.R. Ovshinsky Phys Rev Lett 21 1968 1450
10. J. Feinleib et al. Appl Phys Lett 18 1971 254
11. M. Chen et al. Appl Phys Lett 49 1986 502
12. N. Yamada et al. Jpn J Appl Phys Part I 26 1987 61
13. N. Yamada et al. J Appl Phys 69 1991 2849
14. N. Yamada MRS Bull 21 1996 48
15. H. Borg et al. MRS Symp Proc 674 2001 V1.2.1
16. M.H.R. Lankhorst et al. Nature Mater 4 2005 347
17. T. Morikawa et al. IEEE IEDM Tech Dig 2007 307
18. M. Boniardi et al. Solid State Electron 58 2011 11
19. G. Bruns et al. Appl Phys Lett 95 2008 043108
20. H.J.H. Horii et al. IEEE Symp VLSI Tech Dig 2003 177
21. N. Matsuzaki et al. IEEE IEDM Dig 2005 738
22. G. Betti Beneventi et al. IEEE IMW Tech Dig 2010 21
23. S. Raoux et al. J Appl Phys 105 2009 064918
24. T. Zhang et al. Appl Phys Lett 91 2007 222102
25. F. Rao et al. Appl Phys Lett 95 2009 032105
26. Y. Lu et al. J Appl Phys 109 2011 064503
27. M. Wuttig et al. Nature Mater 6 2007 122
28. P. Jovari et al. Phys Rev B 77 2008 035202
29. A.V. Kolobov et al. Nature Mater 3 2004 703
30. P.B. Littlewood J Phys C 12 1979 4459
31. A.K. Jonsher et al. J Phys C 4 1971 1331
32. A.K. Jonsher, A.A. Ansari Phil Mag 23 1971 205
33. R.A. Street, N.F. Mott Phys Rev Lett 35 1975 1293
34. S.R. Ovshinsky Phys Rev Lett 36 1976 1469
35. N.F. Mott, E.A. Davis Electronic Processes in Non-Crystalline Materials 1979 Clarendon Oxford
36. J.D. Dow, J.J. Hopfield J Non-Cryst Solids 8-10 1972 664
37. A. Pirovano et al. IEEE Trans Electron Devices 51 2004 714
38. F. Bedeschi et al. IEEE J Solid-State Circuits 44 2009 217
39. D. Ielmini, Y. Zhang J Appl Phys 102 2007 054517
40. D. Ielmini et al. IEEE Trans Electron Devices 56 2009 1070
41. C. Feldman, K. Moorjani J Non-Cryst Solids 2 1970 82
42. G.W. Turner et al. J Appl Phys 47 1976 3618
43. D. Ielmini et al. Appl Phys Lett 92 2008 193511
44. W. Den Boer Appl Phys Lett 40 1982 812
45. S. Seo et al. Appl Phys Lett 85 2004 5655
46. S.H. Chang et al. Appl Phys Lett 92 2008 183507
47. Y.C. Chen et al. IEEE IEDM Tech Dig 2006 767
48. D. Adler et al. J Appl Phys 51 1980 3289
49. D. Adler et al. Rev Mod Phys 50 1978 209
50. D. Emin Phys Rev B 74 2006 035206
51. V.G. Karpov Appl Phys Lett 90 2007 123504
52. D. Ielmini Phys Rev B 78 2008 035308
53. H. Fritzsche IBM J Res Dev 13 1969 515
54. P.J. Walsh et al. Phys Rev 178 1969 1274
55. X.S. Miao et al. Jpn J Appl Phys 45 2007 3955
56. U. Russo et al. IEEE Trans Electron Devices 55 2008 506
57. D. Ielmini MRS Symp Proc 1251 2010 H05-01
58. F. Pellizzer et al. IEEE Symp VLSI Tech Dig 2004 18
59. F. Pellizzer et al. IEEE Symp VLSI Tech Dig 2006 122
60. G. Servalli IEEE IEDM Tech Dig 2009 113
61. N. Takaura et al. IEEE IEDM Tech Dig 2003 897
62. N. Matsuzaki et al. IEEE IEDM Tech Dig 2006 758
63. Y. Matsui et al. IEEE IEDM Tech Dig 2007 769
64. C.W. Jeong et al. Solid State Electron 52 2008 591
65. S.L. Cho et al. IEEE Symp VLSI Tech Dig 2005 96
66. Y. Sasago et al. IEEE Symp VLSI Tech Dig 2009 24
67. W. Czubatyj et al. EPCOS available on line www.epcos.org 2006
68. T.D. Happ et al. IEEE Symp VLSI Tech Dig 2006 121
69. M. Breitwisch et al. IEEE Symp VLSI Tech Dig 2007 100
70. D.-S. Chao et al. IEEE Electron Device Lett 28 2007 871
71. J.I. Lee et al. IEEE Symp VLSI Tech Dig 2007 102
72. D.H. Im et al. IEEE IEDM Tech Dig 2008 211
73. W.S. Chen et al. IEEE IEDM Tech Dig 2007 319
74. S.-H. Lee et al. Appl Phys Lett 89 2006 223116
75. C. Kim et al. Appl Phys Lett 94 2009 193504
76. S.H. Lee et al. Nature Nanotech 2 2007 626
77. A. Pirovano et al. IEEE Trans Electron Devices 51 2004 714
78. S. Braga et al. Appl Phys Lett 94 2009 092112
79. I.V. Karpov et al. J Appl Phys 102 2007 124503
80. M. Mitra et al. Appl Phys Lett 96 2010 222111
81. E.P. Donovan et al. J Appl Phys 57 1985 1795
82. S. Roorda et al. Phys Rev B 44 1991 3702
83. K. Koughia et al. J Appl Phys 97 2005 33706
84. J.A. Kalb et al. J Mater Res 22 2007 748
85. D.B. Miracle et al. MRS Bull 32 2007 629
86. G.P. Tiwari et al. Mater Sci Eng A 304-306 2001 499
87. K.P. Chik et al. Solid State Comm 33 1980 1019
88. L.L. Snead, S.J. Zinkle Nucl Instrum Meth Phys Res B 191 2002 497
89. N.M.J. Conway et al. Appl Phys Lett 73 1998 2456
90. A. Yelon et al. Phys Rev B 46 1992 12244
91. D. Ielmini, M. Boniardi Appl Phys Lett 94 2009 091906
92. D. Ielmini et al. Microelectron Eng 86 2009 1942
93. J.F. Zheng et al. IEEE Electron Device Lett 31 2010 999
94. A. Fantini et al. IEEE IEDM Tech Dig 2010 644
95. Y.N. Hwang et al. IEEE IEDM Tech Dig 2003 893
96. K. Shportko et al. Nature Mater 7 2008 653
97. H. Yang et al. Appl Phys Lett 94 2009 203110
98. P. Fons et al. Phys Rev B 82 2010 041203(R)
99. K. Kim, S.J. Ahn IEEE IRPS Tech Dig 2005 157
100. A. Padilla et al. J Appl Phys 110 2011 054501
101. A. Redaelli et al. IEEE IRPS Tech Dig 2010 615
102. C.-F. Chen et al. Symp VLSI Tech Dig 2009 64
103. K. Gopalakrishnan et al. Symp VLSI Tech Dig 2010 205
104. R.S. Shenoy et al. Symp VLSI Tech Dig 2011 94
105. D. Kau et al. IEEE IEDM Tech Dig 2009 617