Modeling of programming and read performance in phase-change memories - Part I: Cell optimization and scaling

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 506-514

  Russo, Ugo ^a   Ielmini, Daniele ^a   Redaelli, Andrea ^a,b   Lacaita, Andrea L ^a  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Amorphous semiconductors; Chalcogenide; Device scaling; Nonvolatile memories; Phase change memory (PCM)

Indexed keywords

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDES; NONVOLATILE STORAGE; OPTIMIZATION;

CELL GEOMETRY; CELL OPTIMIZATION; DEVICE SCALING; MATERIAL ENGINEERING; PROGRAMMING-CURRENT SCALING;

PHASE CHANGE MEMORY;

EID: 39749163606     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.911630     Document Type: Article

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