Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 714-719

  Pirovano, Agostino ^a   Lacaita, Andrea L ^b,c   Pellizzer, Fabio ^a   Kostylev, Sergey A ^d   Benvenuti, Augusto ^a   Bez, Roberto ^a  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c IFN CNR   (Italy)

^d Ovonyx Technologies Inc   (United States)

Author keywords

Chalcogenide; Nonvolatile memories; Phase change memory (PCM); Phase change memory devices

Indexed keywords

AMORPHOUS MATERIALS; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

AMORPHOUS STATE RESISTANCE; CHALCOGENIDE MATERIALS; NONVOLATILE MEMORIES; PHASE CHANGE MEMORY; THRESHOLD VOLTAGE DRIFT;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 2442604559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825805     Document Type: Article

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