MOCVD Ge3Sb2Te5 for PCM applications

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 999-1001

  Zheng, J F ^a   Reed, J ^b   Schell, C ^b   Czubatyj, W ^b   Sandoval, R ^b   Fournier, J ^b   Li, W ^a   Hunks, W ^a   Dennison, C ^b   Hudgens, S ^b   Lowrey, T ^b  

^a ENTEGRIS INC   (United States)

^b Ovonyx Technologies Inc   (United States)

Author keywords

GeSbTe (GST); MOCVD; phase change memory (PCM)

Indexed keywords

ATOMIC COMPOSITIONS; DATA-RETENTION; GESBTE (GST); MOCVD; RESET CURRENTS; SET SPEED; TEST DEVICE;

ANTIMONY ALLOYS; GERMANIUM; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 77956177322     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052233     Document Type: Article

References (11)

1. S. Lai, "Current status of the phase change memory and its future," in IEDM Tech. Dig., 2003, pp. 10.1.1-10.1.4.
2. R. Bez, "Chalcogenide PCM: A memory technology for next decade," in IEDM Tech. Dig., 2009, p. 89.
3. D. Ha and K. Kim, "Recent advancement in high density phase change memory (PRAM)," in VLSI Symp. Tech. Dig., 2007, pp. 1-4.
4. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, and B. Kurdi, "Phase change memory technology," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol.28, no.2, pp. 223-262, Mar. 2010.
5. J. I. Lee, H. Park, S. L. Cho, Y. L. Park, B. J. Bae, J. H. Park, J. S. Park, H. G. An, J. S. Bae, D. H. Ahn, Y. T. Kim, H. Horii, S. A. Song, J. C. Shin, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Highly scalable phase change memory with CVD GeSbTe for sub 50 nm generation," in VLSI Symp. Tech. Dig., 2007, pp. 102-103.
6. D. H. Im, J. I. Lee, S. L. Cho, H. G. An, D. H. Kim, I. S. Kim, H. Park, D. H. Ahn, H. Horii, S. O. Park, U.-I. Chung, and J. T. Moon, "A unified 7.5 nm dash-type confined cell for high performance PRAM device," in IEDM Tech. Dig., 2008, pp. 1-4.
7. 5 films using metallorganic sources," J. Electrochem. Soc., vol.154, no.4, pp. H318-H324, Feb. 2007.
8. V. Pore, T. Hatanpaa, M. Ritala, and M. Leskela, "Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and selenium," J. Amer. Chem. Soc., vol.131, no.10, pp. 3478-3480, 2009.
9. P. C. Chen, W. Hunks, M. Stender, T. Chen, G. Stuaf, C. Xu, and J. Roeder, "CVD of amorphous GeTe thin films using Ge(II) amidinate precursors," in Proc. MRS Spring Meeting, 2008, p. 1071.
10. H. Horii, J. H. Yi, J. H. Park, Y. H. Ha, I. G. Baek, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, K. H. Lee, and J. T. U-In Chung Moon, "A novel cell technology using N-doped GeSbTe film for phase change RAM," in VLSI Symp. Tech. Dig., 2007, pp. 177-178.
11. J. F. Zheng, P. Chen, W. Hunks, M. Stender, C. Xu, W. Li, J. Roeder, S. Kamepalli, C. Schell, J. Reed, J. Ricker, R. Sandoval, J. Founrnier, W. Czubatyj, G. Wicker, C. Dennison, S. Hudgens, and T. Lowrey, "Con-formal MOCVD deposition of GeSbTe in high aspect ratio via structures for phase change memory applications," in Proc. MRS Spring Meeting, 2009, p. 1160.