Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

  Mitra, Mukut ^a   Jung, Yeonwoong ^a   Gianola, Daniel S ^a   Agarwal, Ritesh ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CHALCOGENIDE; AMORPHOUS PHASE; DATA LOSS; IN-PHASE; NANOWIRE DEVICES; TIME-DEPENDENT;

CHALCOGENIDES; DIELECTRIC FILMS; ELECTRIC WIRE; GERMANIUM; NANOWIRES; RESIDUAL STRESSES; STRESS RELAXATION; TELLURIUM COMPOUNDS; THIN FILM DEVICES; THRESHOLD VOLTAGE;

PHASE CHANGE MEMORY;

EID: 77953597357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3447941     Document Type: Article

References (22)

1. S. Raoux, Annu. Rev. Mater. Res. ARMRCU 1531-7331 39, 25 (2009). 10.1146/annurev-matsci-082908-145405
2. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, IEEE Trans. Electron Devices IETDAI 0018-9383 51, 714 (2004). 10.1109/TED.2004.825805
3. D. Ielmini, L. Lacaita, and D. Mantegazza, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 308 (2007). 10.1109/TED.2006.888752 (Pubitemid 46358417)
4. I. V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. A. Kryukov, and V. G. Karpov, J. Appl. Phys. JAPIAU 0021-8979 102, 124503 (2007). 10.1063/1.2825650
5. R. T. Johnson and R. K. Quinn, J. Non-Cryst. Solids JNCSBJ 0022-3093 28, 273 (1978). 10.1016/0022-3093(78)90013-3
6. V. G. Karpov and M. Grimsditch, Phys. Rev. B PRBMDO 0163-1829 48, 6941 (1993). 10.1103/PhysRevB.48.6941
7. O. B. Tsiok, V. V. Brazhkin, A. G. Lyapin, and L. G. Khvostantsev, Phys. Rev. Lett. PRLTAO 0031-9007 80, 999 (1998). 10.1103/PhysRevLett.80.999
8. M. T. Loponen, R. C. Dynes, and V. Narayanamurti, Phys. Rev. B PRBMDO 0163-1829 25, 1161 (1982). 10.1103/PhysRevB.25.1161
9. S. Braga, A. Cabrini, and G. Torelli, Appl. Phys. Lett. APPLAB 0003-6951 94, 092112 (2009). 10.1063/1.3088859
10. D. H. Kang, J. -H. Lee, J. H. Kong, D. Ha, J. Yu, C. Y. Um, J. H. Park, F. Yeung, J. H. Kim, W. I. Park, Y. J. Jeon, M. K. Lee, Y. J. Song, J. H. Oh, G. T. Jeong, and H. S. Jeong, Dig. Tech. Pap.-Symp. VLSI Technol. DTPTEW 0743-1562 2008, 98.
11. R. A. Street and N. F. Mott, Phys. Rev. Lett. PRLTAO 0031-9007 35, 1293 (1975). 10.1103/PhysRevLett.35.1293
12. M. Kastner, D. Adler, and H. Fritzsche, Phys. Rev. Lett. PRLTAO 0031-9007 37, 1504 (1976). 10.1103/PhysRevLett.37.1504
13. M. Kastner and H. Fritzsche, Philos. Mag. B PMABDJ 1364-2812 37, 199 (1978). 10.1080/01418637808226653
14. J. Kalb, F. Spaepen, T. P. L. Pedersen, and M. Wuttig, J. Appl. Phys. JAPIAU 0021-8979 94, 4908 (2003). 10.1063/1.1610775
15. S. H. Lee, Y. Jung, and R. Agarwal, Nat. Nanotechnol. NNAABX 1748-3387 2, 626 (2007). 10.1038/nnano.2007.291 (Pubitemid 47525186)
16. Y. Jung, S. H. Lee, A. T. Jennings, and R. Agarwal, Nano Lett. NALEFD 1530-6984 8, 2056 (2008). 10.1021/nl801482z
17. S. H. Lee, Y. Jung, and R. Agarwal, Nano Lett. NALEFD 1530-6984 8, 3303 (2008). 10.1021/nl801698h
18. P. Caroff, J. B. Wagner, K. A. Dick, H. A. Nilsson, M. Jeppsson, K. Deppert, L. Samuelson, L. R. Wallenberg, and L. Wernersson, Small SMALBC 1613-6810 4, 878 (2008). 10.1002/smll.200700892
19. T. Mrtensson, J. B. Wagner, E. Hilner, A. Mikkelson, C. Thelander, J. Stangl, B. J. Ohlsson, A. Gustafsson, E. Lundgren, L. Samuelson, and W. Seifert, Adv. Mater. ADVMEW 0935-9648 19, 1801 (2007). 10.1002/adma.200700285 (Pubitemid 47167422)
20. H. S. Park and P. A. Klein, Phys. Rev. B PRBMDO 0163-1829 75, 085408 (2007). 10.1103/PhysRevB.75.085408
21. Q. Guo, M. Li, Y. Li, L. Shi, T. C. Chong, J. A. Kalb, and C. V. Thompson, Appl. Phys. Lett. APPLAB 0003-6951 93, 221907 (2008). 10.1063/1.3040314
22. T. P. Leervard Pederson, J. Kalb, W. K. Njoroge, D. Wamwangi, M. Wuttig, and F. Spaepen, Appl. Phys. Lett. APPLAB 0003-6951 79, 3597 (2001). 10.1063/1.1415419