Temperature dependence of phase-change random access memory cell

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3955-3958

  Miao, X S ^a   Shi, L P ^a   Lee, H K ^a   Li, J M ^a   Zhao, R ^a   Tan, P K ^a   Lim, K G ^a   Yang, H X ^a   Chong, T C ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

Author keywords

GeSbTe; I V curve; Phase change; Random access memory; Set reset resistance; Temperature dependence; Threshold voltage

Indexed keywords

ELECTRIC RESISTANCE; PHASE TRANSITIONS; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GESBTE; I-V CURVE; PHASE-CHANGE; SET/RESET RESISTANCE; TEMPERATURE DEPENDENCE;

RANDOM ACCESS STORAGE;

EID: 33646891102     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3955     Document Type: Article

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