Reliability impact of chalcogenide-structure relaxation in phase-change memory (PCM) cells-Part I: Experimental study

IEEE Transactions on Electron Devices

Volumn 56, Issue 5, 2009, Pages 1070-1077

  Ielmini, Daniele ^a   Sharma, Deepak ^a   Lavizzari, Simone ^a   Lacaita, Andrea L ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

Amorphous semiconductors; Chalcogenide materials; Nonvolatile memory; Phase change memory (PCM); Reliability estimation; Reliability modeling

Indexed keywords

CHALCOGENIDE MATERIALS; NONVOLATILE MEMORY; PHASE-CHANGE MEMORY (PCM); RELIABILITY ESTIMATION; RELIABILITY MODELING;

AMORPHOUS SEMICONDUCTORS; ELECTRIC PROPERTIES; GERMANIUM; IMPACT RESISTANCE; MATERIALS; PULSE CODE MODULATION; RELIABILITY;

PHASE CHANGE MEMORY;

EID: 67349254101     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2016397     Document Type: Article

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