Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories

Solid-State Electronics

Volumn 58, Issue 1, 2011, Pages 11-16

  Boniardi, Mattia ^a   Ielmini, Daniele ^a   Tortorelli, Innocenzo ^b   Redaelli, Andrea ^b   Pirovano, Agostino ^b   Allegra, Mario ^b   Magistretti, Michele ^b   Bresolin, Camillo ^b   Erbetta, Davide ^b   Modelli, Alberto ^b   Varesi, Enrico ^b   Pellizzer, Fabio ^b   Lacaita, Andrea L ^a   Bez, Roberto ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Micron   (Italy)

Author keywords

Chalcogenide material; Composition engineering; Crystallization kinetics; Ge Sb Te ternary diagram; Phase change memory (PCM); Set time performance

Indexed keywords

CHALCOGENIDE MATERIALS; COMPOSITION ENGINEERING; GE-SB-TE; PHASE CHANGES; SET TIME;

ANTIMONY COMPOUNDS; CRYSTALLIZATION KINETICS; ELECTRIC PROPERTIES; GERMANIUM; SUPERALLOYS; TERNARY ALLOYS;

PHASE CHANGE MEMORY;

EID: 79952281231     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.033     Document Type: Conference Paper

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