Low-cost and nanoscale non-volatile memory concept for future silicon chips

Nature Materials

Volumn 4, Issue 4, 2005, Pages 347-352

  Lankhorst, Martijn H R ^a   Ketelaars, Bas W S M M ^a   Wolters, R A M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPOSITION; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; ENERGY UTILIZATION; LITHOGRAPHY; MICROPROCESSOR CHIPS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; THIN FILMS; THRESHOLD VOLTAGE;

OVONIC UNIFIED MEMORY (OUM); PHASE-CHANGE MATERIALS (PCM); SEMICONDUCTOR MEMORY; SILICON CHIPS;

DATA STORAGE EQUIPMENT;

EID: 16244410161     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1350     Document Type: Article

References (16)

1. Bez, R. et al. Introduction to Flash memory. Proc. IEEE 91, 489-502 (2003).
2. Weiss, R. Flash memory takes over. Electron. Design 49, 56-64 (2001).
3. Flaherty, N. Not in a Flash. IEEE Rev. 49, 50-53 (2003).
4. Tehrani, S. et al. Magnetoresistive random access memory using magnetic tunnel junctions. Proc. IEEE (USA). 91, 703-714 (2003).
5. Fox, G. R., Chu, F. & Davenport, T. Current and future ferroelectric non-volatile memory technology. J. Vac. Sci. Technol. B. 19, 1967-1971 (2001).
6. Daughton, J. M. & Pohm, A. V. Design of Curie point written magnetoresistance random access memory cells. J. Appl. Phys. 93, 7304-7306 (2003).
7. Gill, M., Lowrey, T. & Park, J. in 2002 IEEE Int. Solid-State Circuits Conf. Digest Technical Papers 1, 202-459 (IEEE, San Francisco, 2002).
8. Pirovano, A. et al. in IEEE Int. Electron Devices Meeting 2003, Washington DC 29.6.1-4 (2003).
9. Adler, D., Henisch, H. K. & Mort, N. The mechanism of threshold switching in amorphous alloys. Rev. Mod. Phys. 50, 209-220 (1978).
10. Pellizzer, F. et al. in Proc. Symp. VLSI Technol. 15-17 June 2004 Honolulu (Hawaii) 18-19 (IEEE, New York, 2004).
11. Yamada, N. Erasable phase-change optical materials. Mater. Res. Soc. Bull. 21, 48-50 (1996).
12. Borg, H. J. et al. Phase-change media for high-numerical-aperture and blue-wavelength recording. Jpn J. Appl. Phys. I 40, 1592-1597 (2001).
13. Lankhorst, M. H. R. et al. Prospects of doped Sb-Te phase-change materials for high-speed recording. Jpn I. Appl. Phys. 142, 863-868 (2003).
14. Meinders, E. R. & Lankhorst, M. H. R. Determination of the crystallisation kinetics of fast-growth phase-change materials for mark-formation prediction. Jpn J. Appl. Phys. I 42, 809-812 (2003).
15. van Steenwinckel, D., Kwinten, H., Locorotondo, S. & Beckx, S. Overbake: sub-40 nm gate patterning with ArF lithography and binary masks. Proc. SPIE Int. Soc. Opt. Eng. 5376, 215-225 (2004).
16. Martens, H. C. F., Vlutters, R. & Prangsma, J. C. Thickness dependent crystallization speed in thin phase change layers for optical recording. J. Appl. Phys. 95, 3977-3983 (2004)