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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Nanosecond switching in GeTe phase change memory cells

(8) Bruns, G a Merkelbach, P a Schlockermann, C a Salinga, M a Wuttig, M a Happ, T D b Philipp, J B b Kund, M b

a RWTH AACHEN UNIVERSITY (Germany)

b QIMONDA DRESDEN GMBH AND CO OHG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH VELOCITY; ELECTRICAL SWITCHING; NON-VOLATILE; PHASE CHANGE MEMORY CELLS; PHASE-CHANGE MEMORIES; PULSE DURATIONS; RANDOM ACCESS; SWITCHABLE; SWITCHING SPEED; TIME RESOLVED EXPERIMENTS;

CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; SEMICONDUCTOR STORAGE; TRANSIENTS;

PHASE CHANGE MEMORY;

EID: 68249102787 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3191670 Document Type: Article

Times cited : (414)

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