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Volumn 105, Issue 6, 2009, Pages

Phase transitions in Ge-Sb phase change materials

(9) Raoux, Simone a Cabral, Cyril b Krusin Elbaum, Lia b Jordan Sweet, Jean L b Virwani, Kumar a Hitzbleck, Martina c Salinga, Martin d Madan, Anita e Pinto, Teresa L e

a IBM ALMADEN RESEARCH CENTER (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d RWTH AACHEN UNIVERSITY (Germany)

e IBM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CO-SPUTTERING; CRYSTALLINE PHASE; CRYSTALLIZATION BEHAVIORS; CRYSTALLIZATION TEMPERATURES; DIFFRACTION PEAKS; ELEMENTAL TARGETS; EUTECTIC ALLOYS; GE CONCENTRATIONS; GE CONTENTS; GLASS TRANSITION TEMPERATURES; HEATING RAMPS; LOWER LIMITS; MASS DENSITIES; OPTICAL REFLECTIVITIES; PHASE CHANGES; TIME-RESOLVED X-RAY DIFFRACTIONS; X- RAY DIFFRACTIONS; X-RAY REFLECTIVITIES;

AGGLOMERATION; ALLOYS; AUGER ELECTRON SPECTROSCOPY; BUOYANCY; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; DIFFRACTION; GERMANIUM; GLASS TRANSITION; PRECIPITATION (CHEMICAL); REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION;

PHASE CHANGE MATERIALS;

EID: 63749114030 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3091271 Document Type: Article

Times cited : (86)

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