Direct evidence of phase separation in Ge2 Sb2 Te5 in phase change memory devices

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Kim, Cheolkyu ^a   Kang, Dongmin ^b   Lee, Tae Yon ^a   Kim, Kijoon H P ^a   Kang, Youn Seon ^a   Lee, Junho ^c   Nam, Sung Wook ^b   Kim, Ki Bum ^b   Khang, Yoonho ^a  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRICAL STRESS; ENERGY DISPERSIVE ANALYSIS; IN-PHASE; MASS MOVEMENT; PEAK POSITION;

BUOYANCY; GERMANIUM; PHASE MODULATION; PHASE SEPARATION; RANDOM ACCESS STORAGE; TELLURIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE CHANGE MEMORY;

EID: 67049132722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3127223     Document Type: Article

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