Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 94-95

  Shenoy, R S ^a   Gopalakrishnan, K ^a   Jackson, B ^a   Virwani, K ^a   Burr, G W ^a   Rettner, C T ^a   Padilla, A ^a   Bethune, D S ^a   Shelby, R M ^a   Kellock, A J ^a   Breitwisch, M ^b   Joseph, E A ^b   Dasaka, R ^b   King, R S ^a   Nguyen, K ^a   Bowers, A N ^a   Jurich, M ^a   Friz, A M ^a   Topuria, T ^a   Rice, P M ^a   Kurdi, B N ^a   more..

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Access device; MIEC; MRAM; NVM; PCM; RRAM

Indexed keywords

ACCESS DEVICES; MIEC; MRAM; NVM; RRAM;

DURABILITY; MRAM DEVICES; RANDOM ACCESS STORAGE;

PHASE CHANGE MEMORY;

EID: 80052672054     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. K. Gopalakrishnan, VLSI 2010, T19-4 (2010).
2. I. Yokota, J. Phys. Soc. Japan, 8(5), 595 (1953).
3. I. Riess, Solid State Ionics, 157, 1 (2003).
4. Y. Sasago, VLSI 2009, T2B-1 (2009).
5. D. C. Kau, IEDM 2009, 27.1 (2009).
6. Int'l Technology Roadmap for Semiconductors, www.itrs.net (2008).
7. A. Padilla, IEDM 2010, 29.4 (2010).