SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 11, 2011, Pages

MOCVD growth of GaN on sapphire using a Ga2O3 interlayer

(5) Tsai, Tsung Yen a Ou, Sin Liang a Hung, Ming Tsung a Wuu, Dong Sing a,b Horng, Ray Hua a

a NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

b DA YEH UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; GAN-SAPPHIRE; GROWTH ATMOSPHERE; LIFT-OFF PROCESS; MOCVD GROWTH; ORIENTATION RELATIONSHIP; PHOTOLUMINESCENCE SPECTRUM; TWO-MATERIALS; X RAY ROCKING CURVE;

FILM GROWTH; LATTICE MISMATCH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

GALLIUM NITRIDE;

EID: 80054060898 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.073111jes Document Type: Article

Times cited : (19)

References (38)

1
- 33845704321
- Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching
- DOI 10.1016/j.jallcom.2006.03.055, PII S0925838806003239
- N. S. Yu, L. W. Guo, H. Chen, Z. G. Xing, B. H. Ge, J. Wang, X. L. Zhu, M. Z. Deng, J. F. Yan, H. Q. Jia, and J. M. Zhou, J. Alloys and Compounds, 428, 312 (2007). 10.1016/j.jallcom.2006.03.055 (Pubitemid 44969520)
- (2007) Journal of Alloys and Compounds , vol.428 , Issue.1-2 , pp. 312-315
- Yu, N.S.¹ Guo, L.W.² Chen, H.³ Xing, Z.G.⁴ Ge, B.H.⁵ Wang, J.⁶ Zhu, X.L.⁷ Peng, M.Z.⁸ Yan, J.F.⁹ Jia, H.Q.¹⁰ Zhou, J.M.¹¹

2
- 58149474523
- 10.1088/0268-1242/23/12/125022
- Y. Sun, T. Yu, Z. Chen, X. Kang, S. Qi, M. Li, G. Lian, S. Huang, R. Xie, and G. Zhang, Semicond. Sci. Technol., 23, 125022 (2008). 10.1088/0268-1242/23/ 12/125022
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 125022
- Sun, Y.¹ Yu, T.² Chen, Z.³ Kang, X.⁴ Qi, S.⁵ Li, M.⁶ Lian, G.⁷ Huang, S.⁸ Xie, R.⁹ Zhang, G.¹⁰

3
- 43449085509
- Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates
- DOI 10.1109/LPT.2008.921120
- S. Y. Huang, R. H. Horng, P. L. Liu, J. Y. Wu, H. W. Wu, and D. S. Wuu, IEEE Photonics Technol. Lett., 20, 797 (2008). 10.1109/LPT.2008.921120 (Pubitemid 351663128)
- (2008) IEEE Photonics Technology Letters , vol.20 , Issue.10 , pp. 797-799
- Huang, S.Y.¹ Horng, R.-H.² Liu, P.L.³ Wu, J.Y.⁴ Wu, H.W.⁵ Wuu, D.S.⁶

4
- 0000223380
- 10.1063/1.117473
- M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, Appl. Phys. Lett., 69, 1749 (1996). 10.1063/1.117473
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1749
- Kelly, M.K.¹ Ambacher, O.² Dahlheimer, B.³ Groos, G.⁴ Dimitrov, R.⁵ Angerer, H.⁶ Stutzmann, M.⁷

5
- 42149109777
- Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off
- DOI 10.1063/1.2906632
- K. Bao, X. N. Kang, B. Zhang, T. Dai, Y. J. Sun, Q. Fu, G. J. Lian, G. C. Xiong, G. Y. Zhang, and Y. Chen, Appl. Phys. Lett., 92, 141104 (2008). 10.1063/1.2906632 (Pubitemid 351535569)
- (2008) Applied Physics Letters , vol.92 , Issue.14 , pp. 141104
- Bao, K.¹ Kang, X.N.² Zhang, B.³ Dai, T.⁴ Sun, Y.J.⁵ Fu, Q.⁶ Lian, G.J.⁷ Xiong, G.C.⁸ Zhang, G.Y.⁹ Chen, Y.¹⁰

6
- 0032620758
- 10.1063/1.124693
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, Appl. Phys. Lett., 75, 1360 (1999). 10.1063/1.124693
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1360
- Wong, W.S.¹ Sands, T.² Cheung, N.W.³ Kneissl, M.⁴ Bour, D.P.⁵ Mei, P.⁶ Romano, L.T.⁷ Johnson, N.M.⁸

7
- 34547330446
- Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes
- DOI 10.1063/1.2749866
- Y. S. Wu, J. H. Cheng, W. C. Peng, and H. Ouyang, Appl. Phys. Lett., 90, 251110 (2007). 10.1063/1.2749866 (Pubitemid 47141175)
- (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 251110
- Wu, Y.S.¹ Cheng, J.-H.² Peng, W.C.³ Ouyang, H.⁴

8
- 67649173367
- 10.1063/1.3155422
- K. Fujii, S. Lee, J. S. Ha, H. J. Lee, H. J. Lee, S. H. Lee, T. Kato, M. W. Cho and T. Yao, Appl. Phys. Lett., 94, 242108 (2009). 10.1063/1.3155422
- (2009) Appl. Phys. Lett. , vol.94 , pp. 242108
- Fujii, K.¹ Lee, S.² Ha, J.S.³ Lee, H.J.⁴ Lee, H.J.⁵ Lee, S.H.⁶ Kato, T.⁷ Cho, M.W.⁸ Yao, T.⁹

9
- 39549119163
- The fabrication of vertical light-emitting diodes using chemical lift-off process
- DOI 10.1109/LPT.2007.912491
- J. S. Ha, S. W. Lee, H. J. Lee, H. J. Lee, S. H. Lee, H. Goto, T. Kato, K. Fujii, M. W. Cho, and T. Yao, IEEE Photonics Technol. Lett., 20, 175 (2008). 10.1109/LPT.2007.912491 (Pubitemid 351279204)
- (2008) IEEE Photonics Technology Letters , vol.20 , Issue.3 , pp. 175-177
- Ha, J.-S.¹ Lee, S.W.² Lee, H.-J.³ Lee, H.-J.⁴ Lee, S.H.⁵ Goto, H.⁶ Kato, T.⁷ Fujii, K.⁸ Cho, M.W.⁹ Yao, T.¹⁰

10
- 61349141481
- 10.1002/pssc.200778573
- H. Goto, S. W. Lee, H. J. Lee, H. J. Lee, J. S. Ha, M. W. Cho, and T. Yao, Phys. Stat. Sol. (c), 5, 1659 (2008). 10.1002/pssc.200778573
- (2008) Phys. Stat. Sol. (C) , vol.5 , pp. 1659
- Goto, H.¹ Lee, S.W.² Lee, H.J.³ Lee, H.J.⁴ Ha, J.S.⁵ Cho, M.W.⁶ Yao, T.⁷

11
- 59749102545
- 10.1016/j.jcrysgro.2008.09.054
- H. J. Lee, J. S. Ha, H. J. Lee, S. W. Lee, S. H. Lee, H. Goto, S. K. Hong, M. W. Cho, T. Yao, K. Fujito, K. Shimoyama, H. Namita, and S. Nagao, J. Cryst. Growth, 311, 470 (2009). 10.1016/j.jcrysgro.2008.09.054
- (2009) J. Cryst. Growth , vol.311 , pp. 470
- Lee, H.J.¹ Ha, J.S.² Lee, H.J.³ Lee, S.W.⁴ Lee, S.H.⁵ Goto, H.⁶ Hong, S.K.⁷ Cho, M.W.⁸ Yao, T.⁹ Fujito, K.¹⁰ Shimoyama, K.¹¹ Namita, H.¹² Nagao, S.¹³

12
- 61349095274
- 10.1063/1.3086890
- S. W. Lee, J. S. Ha, H. J. Lee, H. J. Lee, H. Goto, T. Hanada, T. Goto, K. Fujii, M. W. Cho, and T. Yao, Appl. Phys. Lett., 94, 082105 (2009). 10.1063/1.3086890
- (2009) Appl. Phys. Lett. , vol.94 , pp. 082105
- Lee, S.W.¹ Ha, J.S.² Lee, H.J.³ Lee, H.J.⁴ Goto, H.⁵ Hanada, T.⁶ Goto, T.⁷ Fujii, K.⁸ Cho, M.W.⁹ Yao, T.¹⁰

13
- 39549115245
- 10.1016/j.jcrysgro.2007.11.137
- A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, T. Aggerstam, S. Ould Saad, J. Martin, Z. Djebbour, O. Durand, G. Garry, A. Lusson, D. McGrouther, and J. N. Chapman, J. Cryst. Growth, 310, 944 (2008). 10.1016/j.jcrysgro.2007.11.137
- (2008) J. Cryst. Growth , vol.310 , pp. 944
- Ougazzaden, A.¹ Rogers, D.J.² Hosseini Teherani, F.³ Moudakir, T.⁴ Gautier, S.⁵ Aggerstam, T.⁶ Ould Saad, S.⁷ Martin, J.⁸ Djebbour, Z.⁹ Durand, O.¹⁰ Garry, G.¹¹ Lusson, A.¹² McGrouther, D.¹³ Chapman, J.N.¹⁴

14
- 34548020779
- Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
- DOI 10.1063/1.2770655
- D. J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F. Wyczisk, G. Garry, and T. Monteiro, Appl. Phys. Lett., 91, 071120 (2007). 10.1063/1.2770655 (Pubitemid 47283526)
- (2007) Applied Physics Letters , vol.91 , Issue.7 , pp. 071120
- Rogers, D.J.¹ Hosseini Teherani, F.² Ougazzaden, A.³ Gautier, S.⁴ Divay, L.⁵ Lusson, A.⁶ Durand, O.⁷ Wyczisk, F.⁸ Garry, G.⁹ Monteiro, T.¹⁰ Correira, M.R.¹¹ Peres, M.¹² Neves, A.¹³ McGrouther, D.¹⁴ Chapman, J.N.¹⁵ Razeghi, M.¹⁶

15
- 77954200013
- 10.1116/1.3443220
- H. F. Liu, W. Liu, and S. J. Chua, J. Vac. Sci. Technol. A. 28, 590 (2010). 10.1116/1.3443220
- (2010) J. Vac. Sci. Technol. A. , vol.28 , pp. 590
- Liu, H.F.¹ Liu, W.² Chua, S.J.³

16
- 77949851038
- 10.1143/APEX.3.031001
- C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang, and Y. C. Huang, Appl. Phys. Express, 3, 031001 (2010). 10.1143/APEX.3.031001
- (2010) Appl. Phys. Express , vol.3 , pp. 031001
- Lin, C.F.¹ Dai, J.J.² Lin, M.S.³ Chen, K.T.⁴ Huang, W.C.⁵ Lin, C.M.⁶ Jiang, R.H.⁷ Huang, Y.C.⁸

17
- 77956732087
- 10.1143/APEX.3.092101
- C. F. Lin, J. J. Dai, G. M. Wang, and M. S. Lin, Appl. Phys. Express, 3, 092101 (2010). 10.1143/APEX.3.092101
- (2010) Appl. Phys. Express , vol.3 , pp. 092101
- Lin, C.F.¹ Dai, J.J.² Wang, G.M.³ Lin, M.S.⁴

18
- 17444421589
- 3 substrates by metalorganic vapor phase epitaxy
- DOI 10.1143/JJAP.44.L7
- K. Shimamura, E. G. Vllora, K. Domen, K. Yui, K. Aoki, and N. Ichinose, Jpn J. Appl. Phys., 44, L7 (2005). 10.1143/JJAP.44.L7 (Pubitemid 40540752)
- (2005) Japanese Journal of Applied Physics, Part 2: Letters , vol.44 , Issue.1-7
- Shimamura, K.¹ Villora, E.G.² Domen, K.³ Yui, K.⁴ Aoki, K.⁵ Ichinose, N.⁶

19
- 34250771058
- 3
- DOI 10.1063/1.2745645
- E. G. Vllora, K. Shimamura, and K. Kitamura, Appl. Phys. Lett., 90, 234102-1 (2007). 10.1063/1.2745645 (Pubitemid 46960346)
- (2007) Applied Physics Letters , vol.90 , Issue.23 , pp. 234102
- Villora, E.G.¹ Shimamura, K.² Kitamura, K.³ Aoki, K.⁴ Ujiie, T.⁵

20
- 31644432061
- 3
- DOI 10.1016/j.tsf.2005.10.080, PII S0040609005020936
- E. G. Vllora, K. Shimamura, K. Aoki, and K. Kitamura, Thin solid Films, 500, 209 (2006). 10.1016/j.tsf.2005.10.080 (Pubitemid 43171972)
- (2006) Thin Solid Films , vol.500 , Issue.1-2 , pp. 209-213
- Villora, E.G.¹ Shimamura, K.² Aoki, K.³ Kitamura, K.⁴

21
- 0037157430
- 3 thin film at low deposition temperatures
- DOI 10.1016/S0040-6090(02)00202-X, PII S004060900200202X
- M. Orita, H. Hiramatsu, H. Ohta, Masahiro, and H. Hosono, Thin Solid Films, 411, 134 (2002). 10.1016/S0040-6090(02)00202-X (Pubitemid 35281623)
- (2002) Thin Solid Films , vol.411 , Issue.1 , pp. 134-139
- Orita, M.¹ Hiramatsu, H.² Ohta, H.³ Hirano, M.⁴ Hosono, H.⁵

22
- 56749103363
- 10.1149/1.3023081
- D. H. Kuo and W. H. Wu, J. Electrochem. Soc., 156, K1 (2009). 10.1149/1.3023081
- (2009) J. Electrochem. Soc. , vol.156 , pp. 1
- Kuo, D.H.¹ Wu, W.H.²

23
- 0029732233
- Spatial distribution of the luminescence in GaN thin films
- DOI 10.1063/1.116756, PII S0003695196032019
- F. A. Ponce, D. P. Bour, W. Gotz, and P. J. Wright, Appl. Phys. Lett., 68, 57 (1996). 10.1063/1.116756 (Pubitemid 126688206)
- (1996) Applied Physics Letters , vol.68 , Issue.1 , pp. 57-59
- Ponce, F.A.¹ Bour, D.P.² Gotz, W.³ Wright, P.J.⁴

24
- 0035546505
- Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system
- DOI 10.1016/S0022-0248(01)01631-1, PII S0022024801016311
- H. X. Wang, Y. Amijima, Y. Ishihama, and S. Sakai, J. Cryst. Growth, 233, 681 (2001). 10.1016/S0022-0248(01)01631-1 (Pubitemid 32933934)
- (2001) Journal of Crystal Growth , vol.233 , Issue.4 , pp. 681-686
- Wang, H.X.¹ Amijima, Y.² Ishihama, Y.³ Sakai, S.⁴

25
- 36449002247
- Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
- DOI 10.1063/1.116083, PII S000369519601710X
- X. H. Wu, D. Kapolnek, E. J. Tarsa, B. Heying, S. Keller, B. P. Keller, U. K. Mishra, S. P. Denbarrs, and J. S. Peck, Appl. Phys. Lett., 68, 1371 (1996). 10.1063/1.116083 (Pubitemid 126688254)
- (1996) Applied Physics Letters , vol.68 , Issue.10 , pp. 1371-1373
- Wu, X.H.¹ Kapolnek, D.² Tarsa, E.J.³ Heying, B.⁴ Keller, S.⁵ Keller, B.P.⁶ Mishra, U.K.⁷ Denbaars, S.P.⁸ Speck, J.S.⁹

26
- 80054083133
- 132 8991
- X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth, 189/091, 132 8991
- J. Cryst. Growth , vol.91-189
- Wu, X.H.¹ Fini, P.² Tarsa, E.J.³ Heying, B.⁴ Keller, S.⁵ Mishra, U.K.⁶ Denbaars, S.P.⁷ Speck, J.S.⁸

27
- 0000290588
- 10.1063/1.120051
- L. T. Romano, B. S. Krusor, and R. J. Molnar, Appl. Phys. Lett., 71, 2283 (1997). 10.1063/1.120051
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2283
- Romano, L.T.¹ Krusor, B.S.² Molnar, R.J.³

28
- 0033528963
- 10.1016/S0921-5107(98)00411-5
- A. Strittmatter, A. Krost, V. Turck, M. StraXburg, D. Bimberg, J. Blasing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, and B. K. Meyer, Mater. Sci. Eng., B59, 29 (1999). 10.1016/S0921-5107(98)00411-5
- (1999) Mater. Sci. Eng. , vol.59 , pp. 29
- Strittmatter, A.¹ Krost, A.² Turck, V.³ Straxburg, M.⁴ Bimberg, D.⁵ Blasing, J.⁶ Hempel, T.⁷ Christen, J.⁸ Neubauer, B.⁹ Gerthsen, D.¹⁰ Christmann, T.¹¹ Meyer, B.K.¹²

29
- 35948986557
- 10.1016/0040-6090(76)90322-9
- G. V. Chaplygin and S. A. Semiletov, Thin Solid Films, 32, 321 (1976). 10.1016/0040-6090(76)90322-9
- (1976) Thin Solid Films , vol.32 , pp. 321
- Chaplygin, G.V.¹ Semiletov, S.A.²

30
- 35948950279
- 3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
- DOI 10.1143/JJAP.46.7217
- T. Oshima, T. Okuno, and S. Fujita, Jpn. J. Appl. Phys., 46, 7217 (2007). 10.1143/JJAP.46.7217 (Pubitemid 350074878)
- (2007) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.46 , Issue.11 , pp. 7217-7220
- Oshima, T.¹ Okuno, T.² Fujita, S.³

31
- 33746347992
- Effect of carrier gas on GaN epilayer characteristics
- DOI 10.1002/pssc.200565121, Papers Presented at 6th International Conference on Nitride Semiconductors, ICNS-6
- Y. S. Cho, H. Hardtdegen, N. Kaluza, N. Thillosen, R. Steins, Z. Sofer, and H. Lth, Phys. Stat. Sol. (c), 3, 1408 (2006). 10.1002/pssc.200565121 (Pubitemid 44115753)
- (2006) Physica Status Solidi (C) Current Topics in Solid State Physics , vol.3 , pp. 1408-1411
- Cho, Y.S.¹ Hardtdegen, H.² Kaluza, N.³ Thillosen, N.⁴ Steins, R.⁵ Sofer, Z.⁶ Luth, H.⁷

32
- 10644224310
- 10.1016/j.jcrysgro.2004.09.100
- A. P. Grzegorczyk, L. Macht, P. R. Hageman, J. L. Weyher, and P. K. Larsen, J. Cryst. Growth, 273, 424 (2005). 10.1016/j.jcrysgro.2004.09.100
- (2005) J. Cryst. Growth , vol.273 , pp. 424
- Grzegorczyk, A.P.¹ MacHt, L.² Hageman, P.R.³ Weyher, J.L.⁴ Larsen, P.K.⁵

33
- 0032048780
- 10.1063/1.366585
- N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys., 83, 3656 (1998). 10.1063/1.366585
- (1998) J. Appl. Phys. , vol.83 , pp. 3656
- Weimann, N.G.¹ Eastman, L.F.² Doppalapudi, D.³ Ng, H.M.⁴ Moustakas, T.D.⁵

34
- 0035794394
- 10.1063/1.1359780
- T. Bttcher, S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and J. S. Speck, Appl. Phys. Lett., 78, 1976 (2001). 10.1063/1.1359780
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1976
- Bttcher, T.¹ Einfeldt, S.² Figge, S.³ Chierchia, R.⁴ Heinke, H.⁵ Hommel, D.⁶ Speck, J.S.⁷

35
- 6944232643
- 10.1063/1.118123
- M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J. M. Baranowski, C. T. Foxon, and T. S. Cheng, Appl. Phys. Lett., 69, 73 (1996). 10.1063/1.118123
- (1996) Appl. Phys. Lett. , vol.69 , pp. 73
- Leszczynski, M.¹ Teisseyre, H.² Suski, T.³ Grzegory, I.⁴ Bockowski, M.⁵ Jun, J.⁶ Porowski, S.⁷ Pakula, K.⁸ Baranowski, J.M.⁹ Foxon, C.T.¹⁰ Cheng, T.S.¹¹

36
- 4544236355
- 10.1016/j.jcrysgro.2004.06.040
- B. S. Zhang, M. Wu, J. P. Liu, J. Chen, J. J. Zhu, X. M. Shen, G. Feng, D. G. Zhao, Y. T. Wang, H. Yang, and A. R. Boyd, J. Cryst. Growth, 270, 316 (2004). 10.1016/j.jcrysgro.2004.06.040
- (2004) J. Cryst. Growth , vol.270 , pp. 316
- Zhang, B.S.¹ Wu, M.² Liu, J.P.³ Chen, J.⁴ Zhu, J.J.⁵ Shen, X.M.⁶ Feng, G.⁷ Zhao, D.G.⁸ Wang, Y.T.⁹ Yang, H.¹⁰ Boyd, A.R.¹¹

37
- 70349321615
- A. Hushur, M. H. Manghnani, and J. Narayan, Appl. Phys. Lett., 106, 054317 (2009).
- (2009) Appl. Phys. Lett. , vol.106 , pp. 054317
- Hushur, A.¹ Manghnani, M.H.² Narayan, J.³

38
- 0032606991
- 10.1063/1.123331
- A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki, Appl. Phys. Lett., 74, 3320 (1999). 10.1063/1.123331
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3320
- Kaschner, A.¹ Hoffmann, A.² Thomsen, C.³ Bertram, F.⁴ Riemann, T.⁵ Christen, J.⁶ Hiramatsu, K.⁷ Shibata, T.⁸ Sawaki, N.⁹

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