The fabrication of vertical light-emitting diodes using chemical lift-off process

IEEE Photonics Technology Letters

Volumn 20, Issue 3, 2008, Pages 175-177

  Ha, Jun Seok ^a,b   Lee, S W ^a   Lee, Hyun Jae ^a,b   Lee, Hyo Jong ^a   Lee, S H ^a   Goto, H ^a   Kato, T ^b   Fujii, Katsushi ^b   Cho, M W ^a,b   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical lift off; CrN buffer; GaN; Light emitting diodes (LEDs); Vertical light emitting diode (LED)

Indexed keywords

BUFFER LAYERS; CHROMIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGHER INJECTION FORWARD CURRENT; LIFT-OFF PROCESS; VERTICAL LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 39549119163     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.912491     Document Type: Article

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